相关论文: Simulation of Enhancement Mode GaN HEMTs with Thre…

GANStrument, exploiting GANs with a pitch-invariant feature extractor and instance conditioning technique, has shown remarkable capabilities in synthesizing realistic instrument sounds. To further improve the reconstruction ability and…

Geant4 simulations play a crucial role in the analysis and interpretation of experiments providing low energy precision tests of the Standard Model. This paper focuses on the accuracy of the description of the electron processes in the…

We report on a giant enhancement in the thermal responsivity of the doubly-clamped GaAs microelectromechanical (MEMS) beam resonators by using the internal mode coupling effect. This is achieved by coupling the fundamental bending mode with…

We fabricate and investigate high quality graphene devices with contactless, suspended top gates, and demonstrate formation of graphene pnp junctions with tunable polarity and doping levels. The device resistance displays distinct…

In this paper, physics-based analytical models using two-dimensional (2D) Poisson equations for surface potential, channel potential, electric field, and drain current in AlN/$\beta$-Ga$_2$O$_3$ high electron mobility transistor (HEMT) is…

Microelectromechanical systems (MEMS) gyroscopes are widely used, e.g. in modern automotive and consumer applications, and require signal stability and accuracy in rather harsh environmental conditions. In many use cases, device reliability…

We report the batch fabrication of graphene field-effect-transistors (GFETs) with nanoperforated graphene as channel. The transistors were cut and encapsulated. The encapsulated GFETs display saturation regions that can be tuned by…

We present a novel electronic-structure modulation transistor (EMT), which can possibly be used for post-CMOS logic applications. The device principle is based on the bandwidth modulation of a midgap or near-midgap localized state in the…

Graphene-based devices have shown great promise for several applications. For graphene devices to be used in real-world systems, it is necessary to demonstrate competitive device performance, repeatability of results, reliability, and a…

This paper reviews recent progress and key challenges in process and reliability for high-performance vertical GaN transistors and diodes, focusing on the 200 mm CMOS-compatible technology. We particularly demonstrated the potential of…

We present the study of using depletion charges for tailoring lateral band profiles and applying it to the promising gate-all-around field-effect transistors (GAAFET). Specifically, we introduce heavily p-type doped Si next to the channel,…

Under the assumption that a quark-gluon plasma droplet is produced and its evolution can be described by hydrodynamics in p + A collisions, $\gamma$-triggered hadron spectra are studied within a next-to-leading-order perturbative QCD parton…

We propose non-volatile memory (NVM) designs based on Piezoelectric Strain FET (PeFET) utilizing a piezoelectric/ferroelectric (PE/FE such as PZT) coupled with 2D Transition Metal Dichalcogenide (2D-TMD such as MoS2) transistor. The…

The topological quantum field-effect transition in buckled 2D-Xenes can potentially be engineered to enable sub-thermionic transistor operation coupled with dissipationless ON-state conduction. Substantive device design strategies to…

We use a detailed numerical model of stimulated thermal Rayleigh scattering to compute mode instability thresholds in Tm$^{3+}$-doped fiber amplifiers. The fiber amplifies 2040 nm light using a 790 nm pump. The cross-relaxation process is…

Transition Radiation Detectors (TRDs) are useful for electron identification and hadron suppression in high energy nuclear and particle physics experiments. Conventional wire-chamber TRDs face operational limitations due to space charge…

The paper describes the project, implementation and test of a C-band (5GHz) Low Noise Amplifier (LNA) using new low noise Pseudomorphic High Electron Mobility Transistors (pHEMTS) from Avago. The amplifier was developed to be used as a cost…

Thickness engineered tunneling field-effect transistors (TE-TFET) as a high performance ultra-scaled steep transistor is proposed. This device exploits a specific property of 2D materials: layer thickness dependent energy bandgap (Eg).…

We model electrical conductivity in metastable amorphous $Ge_{2}Sb_{2}Te_{5}$ using independent contributions from temperature and electric field to simulate phase change memory devices and Ovonic threshold switches. 3D, 2D-rotational, and…

InGaN/GaN tunnel junction contacts were grown on top of an InGaN/GaN blue (450 nm) light emitting diode wafer using plasma assisted molecular beam epitaxy. The tunnel junction contacts enable low spreading resistance n-GaN top contact layer…