相关论文: Simulation of Enhancement Mode GaN HEMTs with Thre…
We show simultaneous p and n type carrier injection in bilayer graphene channel by varying the longitudinal bias across the channel and the top gate voltage. The top gate is applied electrochemically using solid polymer electrolyte and the…
Using a simple setup to bend a flexible substrate, we demonstrate deterministic and reproducible in-situ strain tuning of graphene electronic devices. Central to this method is the full hBN encapsulation of graphene, which preserves the…
We present the noise performance of High Electron Mobility Transistors (HEMT) developed by CNRS-C2N laboratory. Various HEMT's gate geometries with 2 pF to 230 pF input capacitance have been studied at 4 K. A model for both voltage and…
We report the capability to simulate in a quantum mechanical tight-binding (TB) atomistic fashion NW devices featuring several hundred to millions of atoms and diameter up to 18 nm. Such simulations go far beyond what is typically…
This paper describes performance of a voltage controlled phase shifter designed for a high average power and a high figure of merit. The device is a reflection-type, resonant phase shifter that utilizes ferroelectric capacitors and…
In this work the first demonstration of a high frequency branch of the geodesic acoustic mode (GAM) driven by electron temperature gradient (ETG) modes is presented. The work is based on a fluid description of the ETG mode retaining…
In this letter we propose the design and simulation study of a novel transistor, called HFinFET, which is a hybrid of a HEMT and a FinFET, to obtain excellent performance and good off state control. Followed by the description of the…
The band-to-band tunneling transistors have some performance advantages over the conventional MOSFETs due to the <60mV/dec sub-threshold slope. In this paper, carbon nanotubes are used as a model channel material to address issues that we…
We report on the demonstration and investigation of Ta2O5 as high-\k{appa} dielectric for InAlN/GaN-MOS HEMT-on-Si. Ta2O5 of thickness 24 nm and dielectric constant ~ 30 was sputter deposited on InAlN/GaN HEMT and was investigated for…
Gate tunable p-type multilayer tin mono-sulfide (SnS) field-effect transistor (FET) devices with SnS thickness between 50 and 100 nm were fabricated and studied to understand their performances. The devices showed anisotropic inplane…
We describe a theory of Mn local-moment magnetization relaxation due to p-d kinetic-exchange coupling with the itinerant-spin subsystem in the ferromagnetic semiconductor (Ga,Mn)As alloy. The theoretical Gilbert damping coefficient implied…
Gas turbine engines are highly efficient and powerful because of their high-pressure turbines (HPTs). Furthermore, stationary blades shape and prepare high-pressure gas for efficient utilization by moving blades. Consequently, optimizing…
We report a comprehensive micro-Raman scattering study of electrochemically-gated graphene field-effect transistors. The geometrical capacitance of the electrochemical top-gates is accurately determined from dual-gated Raman measurements,…
Black phosphorus (BP) tunneling transistors (TFETs) using heterojunction (He) are investigated by atomistic quantum transport simulations. It is observed that edge states have a great impact on transport characteristics of BP He-TFETs,…
Transformer architectures dominate modern NLP but often demand heavy computational resources and intricate hyperparameter tuning. To mitigate these challenges, we propose a novel framework, BoostTransformer, that augments transformers with…
Phonon drag may be harnessed for thermoelectric generators and devices. Here, we demonstrate the geometric control of the phonon-drag contribution to the thermopower. In nanometer-thin electrically conducting $\beta$-Ga$_2$O$_3$ films…
This work presents a novel Gallium nitride (GaN) high-electron-mobility transistor (HEMT) based ultraviolet photodetector architecture integrating advanced material and structural design strategies to enhance detection performance and…
Voltage biased, frequency multiplexed TES bolometers have become a widespread tool in mm-wave astrophysics. However, parasitic impedance and dynamic range issues can limit stability, performance, and multiplexing factors. Here, we present…
Transformers have become keystone models in natural language processing over the past decade. They have achieved great popularity in deep learning applications, but the increasing sizes of the parameter spaces required by transformer models…
We present an analytical device model for a graphene bilayer field-effect transistor (GBL-FET) with a graphene bilayer as a channel, and with back and top gates. The model accounts for the dependences of the electron and hole Fermi energies…