相关论文: Characterizing the Structure of Topological Insula…
We investigate domain formation and local morphology of thin films of $\alpha$-sexithiophene ($\alpha$-6T) on Au(100) beyond monolayer coverage by combining high resolution scanning tunneling microscopy (STM) experiments with electronic…
Recently, it was shown that quantum spin Hall insulator (QSHI) phase with a gap wide enough for practical applications can be realized in the ultra thin films constructed from two inversely stacked structural elements of trivial band…
We show how the two-dimensional (2D) topological insulator evolves, by stacking, into a strong or weak topological insulator with different topological indices, proposing a new conjecture that goes beyond an intuitive picture of the…
The topological properties of materials are, until now, associated with the features of their crystalline structure, although translational symmetry is not an explicit requirement of the topological phases. Recent studies of hopping models…
Topological insulators are materials that conduct on the surface and insulate in their interior due to non-trivial topological order. The edge states on the interface between topological (non-trivial) and conventional (trivial) insulators…
We analyze the evolution of the normal and superconducting electronic properties in epitaxial TiN films, characterized by high Ioffe-Regel parameter values, as a function of the film thickness. As the film thickness decreases, we observe an…
Substrate engineering provides an opportunity to modulate the physical properties of quantum materials in thin film form. Here we report that TiSe$_2$ thin films grown on TiO$_2$ have unexpectedly large electron doping that suppresses the…
Three-dimensional topological insulators host surface states with linear dispersion, which manifest as a Dirac cone. Nanoscale transport measurements provide direct access to the transport properties of the Dirac cone in real space and…
We study Coulomb drag between the top and bottom surfaces of topological insulator films. We derive a kinetic equation for the thin-film spin density matrix containing the full spin structure of the two-layer system, and analyze the…
Using oxide substrates for functional ceramic thin film deposition beyond their usual application as chemical inert, lattice-matched support for the films represents a novel concept in ceramic thin film research. The substrates are applied…
PtSe2 is attracting considerable attention as a high mobility two-dimensional material with envisionned applications in microelectronics, photodetection and spintronics. The growth of high quality PtSe2 on insulating substrates with…
We explore the topological behavior of the binary Zintl phase of the alkaline earth metals based compounds Sr$_2$Pb and Sr$_2$Sn using both standard and hybrid density functional theory. It is found that Sr$_2$Pb lies on the verge of a…
The structure of thin terminated Bi(1 1 1) films of approximately 1 nm thickness is investigated from first principles. Our density functional theory calculations show that covalent bonds to the surface can change the orientation of the…
Topological insulator films are promising materials for optoelectronics due to a strong optical absorption and a thickness dependent band gap of the topological surface states. They are superior candidates for photodetector applications in…
A Moire superlattice on the topological insulator surface is predicted to exhibit many novel properties but has not been experimentally realized. Here, we developed a two-step growth method to successfully fabricate a topological insulator…
Classical molecular-dynamics simulations have been carried out to investigate densification mechanisms in silicon dioxide thin films deposited on an amorphous silica surface, according to a simplified ion-beam assisted deposition (IBAD)…
BiFeO3 thin films epitaxially grown on SrRuO3-buffered (001)-oriented SrTiO3 substrates show orthogonal bundles of twin domains, each of which contains parallel and periodic 71o domain walls. A smaller amount of 109o domain walls are also…
In the recently discovered class of materials known as topological insulators, the presence of strong spin-orbit coupling causes certain topological invariants in the bulk to differ from their values in vacuum. The sudden change of…
Epitaxial thin films of (Sn$_{x}$Pb$_{1-x}$)$_{1-y}$In$_{y}$Te were successfully grown by molecular-beam-epitaxy (MBE) in a broad range of compositions (0 $\leq$ x $\leq$ 1, 0 $\leq$ y $\leq$ 0.23). We investigated electronic phases of the…
We report the heteroepitaxy of single crystal thin films of Bi2Se3 on the (111)B surface of GaAs by molecular beam epitaxy. We find that Bi2Se3 grows highly c-axis oriented, with an atomically sharp interface with the GaAs substrate. By…