相关论文: Characterizing the Structure of Topological Insula…
Molecular beam epitaxy of Ge (111) thin films on epitaxial-Gd2O3/Si(111) substrates is reported, along with a systematic investigation of the evolution of Ge growth, and structural defects in the grown epilayer. While Ge growth begins in…
We evaluate quantum corrections to conductivity in an electrically gated thin film of a three-dimensional (3D) topological insulator (TI). We derive approximate analytical expressions for the low-field magnetoresistance as a function of…
We investigate the band dispersion and the spin texture of topologically protected surface states in the bulk topological insulators Bi2Se3 and Bi2Te3 by first-principles methods. Strong spin-orbit entanglement in these materials reduces…
Single crystalline materials, different from polycrystalline and twinning structures, are desired for investigating the intrinsic physical properties, as grain and twin boundaries often work as a source of artifacts. Bismuth chalcogenides,…
One of the most striking manifestations of electronic properties of topological insulators is the dependence of the photocurrent direction on the helicity of circularly polarized optical excitation. The helicity dependent photocurrents,…
Alloys of Bi$_2$Te$_3$ and Sb$_2$Te$_3$ ((Bi$_{1-x}$Sb$_x$)$_2$Te$_3$) have played an essential role in the exploration of topological surface states, allowing us to study phenomena that would otherwise be obscured by bulk contributions to…
Topological insulators are a class of materials with insulating bulk but protected conducting surfaces due to the combination of spin-orbit interactions and time-reversal symmetry. The surface states are topologically non-trivial and robust…
We theoretically study the topography of a biphasic surfactant monolayer in the vicinity of domain boundaries. The differing elastic properties of the two phases generally lead to a nonflat topography of ``mesas'', where domains of one…
The behavior as a function of temperature of very thin films (10 to 200 nm) of pentylcyanobiphenyl (5CB) on silicon substrates is reported. In the vicinity of the nematic/isotropic transition we observe a coexistence of two regions of…
Understanding the nature of surface states and their exchange gaps in magnetic topological insulator MnBi$_2$Te$_4$ (MBT) thin films is crucial for achieving robust topological Chern and Axion insulating phases where the Quantum Anomalous…
A Bi2Se3 topological insulator field effect transistor is investigated by using ionic liquid as an electric double layer gating material, leading to a conductance modulation of 365% at room temperature. We discuss the role of charged…
Topological insulators combine insulating properties in the bulk with scattering-free transport along edges, supporting dissipationless unidirectional energy and information flow even in the presence of defects and disorder. The feasibility…
Current-voltage characteristics in the insulator bordering superconductivity in disordered thin films exhibit current jumps of several orders of magnitude due to the development of a thermally bistable electronic state at very low…
We discuss possible topological phase transitions in Ge-based thin films of Ge(Bi$_x$Sb$_{1-x}$)$_2$Te$_4$ as a function of layer thickness and Bi concentration $x$ using the first principles density functional theory framework. The bulk…
The surface electronic properties of the important topological insulator Bi2Te3 are shown to be robust under an extended surface preparation procedure which includes exposure to atmosphere and subsequent cleaning and recrystallization by an…
Combining the ability to prepare high-quality, intrinsic Bi$_2$Te$_3$ topological insulator thin films of low carrier density with in-situ protective capping, we demonstrate a pronounced, gate-tunable change in transport properties of…
Tin telluride (SnTe) is an IV-VI semiconductor with a topological crystalline insulator band structure, high thermoelectric performance, and in-plane ferroelectricity. Despite its many applications, there has been little work focused on…
Topological insulators are materials with a bulk excitation gap generated by the spin orbit interaction, and which are different from conventional insulators. This distinction is characterized by Z_2 topological invariants, which…
Two quintessential ingredients governing the topological invariant of a system are the dimensionality and the symmetry of the system. Due to the recent development of thin film and artificial superstructure growth technique, it is possible…
We present low-temperature transport measurements of a gate-tunable thin film topological insulator system that features high mobility and low carrier density. Upon gate tuning to a regime around the charge neutrality point, we infer an…