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相关论文: Characterizing the Structure of Topological Insula…

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By using first-principles plane wave calculations, we systematically study the electronic properties of the thin film of antimony in (111) orientation. Considering the spin-orbit interaction, for stoichiometric surface, the topological…

材料科学 · 物理学 2012-01-11 Shuang-Xi Wang , Ping Zhang , Shu-Shen Li

The conditions whereby epitaxy is achieved are commonly believed to be mostly governed by misfit strain. We report on a systematic investigation of growth and interface structure of single crystalline tungsten thin films on two different…

Topological insulators (TIs) like Bi$_2$Se$_3$ are a class of material with topologically protected surface states in which spin-momentum locking may enable spin-polarized and defect-tolerant transport. In this work, we achieved the…

材料科学 · 物理学 2020-11-26 T. Guillet , A. Marty , C. Beigné , C. Vergnaud , M. -T. Dau , P. Noël , J. Frigerio , G. Isella , M. Jamet

Strong spin-orbit coupling in topological insulators results in the ubiquitously observed weak antilocalization feature in their magnetoresistance. Here we present magnetoresistance measurements in ultra thin films of the topological…

介观与纳米尺度物理 · 物理学 2014-03-04 Li Zhang , Merav Dolev , Qi I. Yang , Robert H. Hammond , Bo Zhou , Alexander Palevski , Yulin Chen , Aharon Kapitulnik

We investigate the spin and charge densities of surface states of the three-dimensional topological insulator $Bi_2Se_3$, starting from the continuum description of the material [Zhang {\em et al.}, Nat. Phys. 5, 438 (2009)]. The spin…

介观与纳米尺度物理 · 物理学 2012-09-04 P. G. Silvestrov , P. W. Brouwer , E. G. Mishchenko

Thin films of topological insulators (TI) usually exhibit multiple parallel conduction channels for the transport of electrical current. Beside the topologically protected surface states (TSS), parallel channels may exist, namely the…

介观与纳米尺度物理 · 物理学 2024-01-30 Sven Just , Felix Lüpke , Vasily Cherepanov , F. Stefan Tautz , Bert Voigtländer

The interface and electronic structure of thin (~20-74 nm) Co3O4(110) epitaxial films grown by oxygen-assisted molecular beam epitaxy on MgAl2O4(110) single crystal substrates have been investigated by means of real and reciprocal space…

Thin films of Topological insulators (TIs) coupled with ferromagnets (FMs) are excellent candidates for energy-efficient spintronics devices. Here, the effect of crystalline structural disorder of TI on interfacial and magnetic properties…

The surface of a topological crystalline insulator (TCI) carries an even number of Dirac cones protected by crystalline symmetry. We epitaxially grew high quality Pb$_{1-x}$Sn$_x$Te(111) films and investigated the TCI phase by in-situ…

Transient reflectivity (TR) from thin films (6 - 40 nm thick) of the topological insulator Bi2Se3 reveal ultrafast carrier dynamics, which suggest the existence of both radiative and non-radiative recombination between electrons residing in…

介观与纳米尺度物理 · 物理学 2015-06-23 Yuri D. Glinka , Sercan Babakiray , Trent A. Johnson , Mikel B. Holcomb , David Lederman

We show that a semiconductor thin film can acquire a non-trivial spin texture due to the proximity effect induced by a topological insulator. The effect stems from coupling to the topological surface states and is present even when the…

介观与纳米尺度物理 · 物理学 2015-03-19 Jimmy A. Hutasoit , Tudor D. Stanescu

Topological insulators and skyrmion-hosting, chiral magnetic multilayers are two well-explored areas of modern condensed matter physics, each offering unique advantages for spintronics applications. In this paper, we demonstrate the…

Thin films of transition metal oxides open up a gateway to nanoscale electronic devices beyond silicon characterized by novel electronic functionalities. While such films are commonly prepared in an oxygen atmosphere, they are typically…

The response of thin films of Bi$_2$Se$_3$ to a strong perpendicular magnetic field is investigated by performing magnetic bandstructure calculations for a realistic multi-band tight-binding model. Several crucial features of Landau…

介观与纳米尺度物理 · 物理学 2015-03-02 A. Pertsova , C. M. Canali , A. H. MacDonald

(Bi$_{1-x}$Sb$_x$)$_2$Te$_3$ alloys are non-degenerate topological insulators (TIs) whose Dirac point (DP) can be tuned within the bulk bandgap by varying the composition, effectively reducing bulk conduction while allowing surface carrier…

SrxBi2Se3 is a candidate topological superconductor but its superconductivity requires the intercalation of Sr by into the van-der-Waals gaps of Bi2Se3. We report the synthesis of SrxBi2Se3 thin films by molecular beam epitaxy, and we…

The spectacular metal-to-insulator transition of V2O3 can be progressively suppressed in thin film samples. Evidence for phase separation was observed using microbridges as a mesoscopic probe of transport properties where the same film…

材料科学 · 物理学 2009-11-13 C. Grygiel , A. Pautrat , W. C. Sheets , W. Prellier , B. Mercey , L. Mechin

The search for topological superconductivity has motivated investigations into materials that combine topological and superconducting properties. The half-Heusler compound YPtBi appears to be such a material, however experiments have thus…

We report on the optoelectronic properties of thin films of Bi2Se3 grown by molecular beam epitaxy. The films are patterned into circuits with typical extensions of tens of microns. In spatially resolved experiments, we observe submicron…

介观与纳米尺度物理 · 物理学 2015-02-02 C. Kastl , T. Guan , X. Y. He , K. H. Wu , Y. Q. Li , A. W. Holleitner

Bismuth antimony alloys (Bi$_x$Sb$_{1-x}$) provide a tuneable materials platform to study topological transport and spin-polarized surface states resulting from the nontrivial bulk electronic structure. In the two-dimensional limit, it is a…