相关论文: InAs nanowire transistors with multiple, independe…

Gate-all-around (GAA) nanowire (NW) field-effect transistor (FET) is a promising device architecture due to its superior gate controllability than that of the conventional FinFET architecture. The significantly higher electron mobility of…

Electrical conductance through InAs nanowires is relevant for electronic applications as well as for fundamental quantum experiments. Here we employ nominally undoped, slightly tapered InAs nanowires to study the diameter dependence of…

We present a report on hybrid InSb-Pb nanowires that combine high spin-orbit coupling with a high critical field and a large superconducting gap. Material characterization indicates the Pb layer of high crystal quality on the nanowire side…

We demonstrate the proof of principle for a ternary adder using silicon metal-on-insulator single electron transistors (SET). Gate dependent rectifying behavior of a single electron transistor results in a robust three-valued output as a…

Quantum dots (QDs) made from semiconductors are among the most promising platforms for the developments of quantum computing and simulation chips, and have advantages over other platforms in high density integration and in compatibility to…

We report conductance and supercurrent of InAs nanowires coupled to Al-superconducting electrodes with short channel lengths and good Ohmic contacts. The nanowires are suspended 15\,nm above a local gate electrode. The charge density in the…

The native gate set is fundamental to the performance of quantum devices, as it governs the accuracy of basic quantum operations and dictates the complexity of implementing quantum algorithms. Traditional approaches to extending gate sets…

We investigate by low-temperature transport experiments the sub-threshold behavior of triple-gate silicon field-effect transistors. These three-dimensional nano-scale devices consist of a lithographically defined silicon nanowire surrounded…

We propose a universal approach based on Hamiltonian inverse engineering to realize a set of parameterized two-qubit gates. This method possesses unique advantages to simultaneous control of transitions among four energy levels, providing a…

We demonstrate an optimized fabrication process for electric field (voltage gate) controlled nano-constriction spin Hall nano-oscillators (SHNOs), achieving feature sizes of <30 nm with easy to handle ma-N 2401 e-beam lithography negative…

With downscaling of electronic circuits, components based on semiconductor quantum dots are assuming increasing relevance for future technologies. Their response under external stimuli intrinsically depend on their quantum properties. Here…

As silicon transistors scale toward future technology nodes, three-dimensional architectures -- including gate-all-around (GAA) nanoribbon and complementary field-effect transistors (CFETs) -- require channel widths in the tens of…

We demonstrate with a fully quantum-mechanical approach that graphene can function as gate-controllable transistors for pumped spin currents, i.e., a stream of angular momentum induced by the precession of adjacent magnetizations, which…

Dispersive sensing is a powerful technique that enables scalable and high-fidelity readout of solid-state quantum bits. In particular, gate-based dispersive sensing has been proposed as the readout mechanism for future topological qubits,…

We have developed a technique that dramatically reduces the contact resistances and depletes a shunting channel between the contacts outside the Hall bar in ultra-high mobility SiGe/Si/SiGe heterostructures. It involves the creation of…

The first inversion-mode gate-all-around (GAA) III-V MOSFETs are experimentally demonstrated with a high mobility In0.53Ga0.47As channel and atomic-layer-deposited (ALD) Al2O3/WN gate stacks by a top-down approach. A well-controlled InGaAs…

Addressing the optical properties of a single nanoparticle in the infrared is particularly challenging, thus alternative methods for characterizing the conductance spectrum of nanoparticles in this spectral range need to be developed. Here…

We report an experimental study of a one-dimensional quintuple-quantum-dot array integrated with two quantum dot charge sensors in an InAs nanowire. The device is studied by measuring double quantum dots formed consecutively in the array…

Making ultra-short gate-length transistors significantly contributes to scaling the contacted gate pitch. This, in turn, plays a vital role in achieving smaller standard logic cells for enhanced logic density scaling. As we push the…

Bound states in superconductor-nanowire hybrid devices play a central role, carrying informationon the ground states properties (Shiba or Andreev states) or on the topological properties of thesystem (Majorana states). The spectroscopy of…