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相关论文: Phosphorene analogues: isoelectronic two-dimension…

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We perform systematic investigation on the geometric, energetic and electronic properties of group IV-VI binary monolayers (XY), which are the counterparts of phosphorene, by employing density functional theory based electronic structure…

介观与纳米尺度物理 · 物理学 2016-04-19 C. Kamal , Aparna Chakrabarti , Motohiko Ezawa

In analogy to III-V compounds, which have significantly broadened the scope of group IV semiconductors, we propose IV-VI compounds as isoelectronic counterparts to layered group V semiconductors. Using {\em ab initio} density functional…

材料科学 · 物理学 2015-07-28 Zhen Zhu , Jie Guan , Dan Liu , David Tomanek

The success of black phosphorus in fast electronic and photonic devices is hindered by its rapid degradation in presence of oxygen. Orthorhombic tin selenide is a representative of group IV-VI binary compounds that are robust,…

材料科学 · 物理学 2018-04-18 I. Pletikosić , F. von Rohr , P. Pervan , P. K. Das , I. Vobornik , R. J. Cava , T. Valla

We predict enormous piezoelectric effects in intrinsic monolayer group IV monochalcogenides (MX, M=Sn or Ge, X=Se or S), including SnSe, SnS, GeSe and GeS. Using first-principle simulations based on the modern theory of polarization, we…

材料科学 · 物理学 2015-11-05 Ruixiang Fei , Wenbin Li , Ju Li , Li Yang

The family of group IV-VI monochalcogenides has an atomically puckered layered structure, and their atomic bond configuration suggests the possibility for the realization of various polymorphs. Here, we report the synthesis of the first…

We find that several layer-phase group-III monochalcogenides, including GaS, GaSe and InSe, are piezoelectric in the monolayer form. First-principles calculations reveal that the piezoelectric coefficients of monolayer GaS, GaSe and InSe…

材料科学 · 物理学 2016-01-22 Wenbin Li , Ju Li

The extraordinary properties and the novel applications of black phosphorene induce the research interest on the monolayer group-IV monochalcogenides. Here using the first-principles calculations, we systematically investigate the…

材料科学 · 物理学 2017-12-27 Yuanfeng Xu , Hao Zhang , Hezhu Shao , Gang Ni , Hongliang Lu , Rongjun Zhang , Bo Peng , Yongyuan Zhu , Heyuan Zhu

Point defects in the binary group-IV monochalcogenide monolayers of SnS, SnSe, GeS, GeSe are investigated using density-functional-theory calculations. Several stable configurations are found for oxygen defects, however we give evidence…

介观与纳米尺度物理 · 物理学 2016-08-17 Lídia C. Gomes , A. Carvalho , A. H. Castro Neto

Phosphorene, a 2D allotrope of phosphorus, is technologically very appealing because of its semiconducting properties and narrow band gap. Further reduction of the phosphorene dimensionality may spawn exotic properties of its electronic…

Group-IV monochalcogenides are a family of two-dimensional puckered materials with an orthorhombic structure that is comprised of polar layers. In this article, we use first principles calculations to show the multistability of monolayer…

材料科学 · 物理学 2016-08-12 Paul Z. Hanakata , Alexandra Carvalho , David K. Campbell , Harold S. Park

Today, 2D semiconductor materials have been extended into the nitrogen group: phosphorene, arsenene, antimonene and even nitrogene. Motivated by them, based upon first-principles density functional calculations, we propose a new…

介观与纳米尺度物理 · 物理学 2016-03-11 Hang Xiao , Feng Hao , Xiangbiao Liao , Xiaoyang Shi , Yayun Zhang , Xi Chen

Two-dimensional (2D) semiconductors isoelectronic to phosphorene has been drawing much attention recently due to their promising applications for next-generation (opt)electronics. This family of 2D materials contains more than 400 members,…

介观与纳米尺度物理 · 物理学 2017-08-17 Zhen Zhu , Baojuan Dong , Teng Yang , Zhi-Dong Zhang

Monolayer group-IV monochalcogenides (MX, M = Ge, Sn, Pb; X = S, Se, Te) are a family of novel two-dimensional (2D) materials that have atomic structures closely related to that of the staggered black phosphorus lattice. The structure of…

材料科学 · 物理学 2020-06-16 Kai Chang , Stuart S. P. Parkin

Using full-potential density functional calculations we have investigated the structural and electronic properties of graphene and some of its structural analogues, viz., monolayer (ML) of SiC, GeC, BN, AlN, GaN, ZnO, ZnS and ZnSe. While…

介观与纳米尺度物理 · 物理学 2013-05-30 Gautam Mukhopadhyay , Harihar Behera

SnSe, a group IV-VI monochalcogenide with layered crystal structure similar to black phosphorus, has recently attracted extensive interests due to its excellent thermoelectric properties and potential device applications. Experimental…

Phosphorene, a monolayer of black phosphorus, is promising for nanoelectronic applications not only because it is a natural p-type semiconductor but also it possesses a layer-number dependent direct bandgap (in the range of 0.3 eV~1.5 eV).…

介观与纳米尺度物理 · 物理学 2014-03-26 Jun Dai , Xiao Cheng Zeng

The two-dimensional ferroelectrics GeS, GeSe, SnS and SnSe are expected to have large spontaneous in-plane electric polarization and enhanced shift-current response. Using density functional methods, we show that these materials also…

介观与纳米尺度物理 · 物理学 2017-10-03 Suman Raj Panday , Benjamin M. Fregoso

A single atomic layer of black phosphorus, phosphorene, was experimentally realized in 2014. It has a puckered honeycomb lattice structure and a semiconducting electronic structure. In the first part of this paper, we use a simple LCAO…

介观与纳米尺度物理 · 物理学 2015-10-22 Shuhei Fukuoka , Toshihiro Taen , Toshihito Osada

Searching for materials with single atom-thin as well as planar structure, like graphene and borophene, is one of the most attractive themes in two dimensional materials. Herein, using density functional theory calculations, we have…

材料科学 · 物理学 2024-09-17 Jun-Hui Yuan , Biao Zhang , Ya-Qian Song , Jia-Fu Wang , Kan-Hao Xue , Xiang-Shui Miao

III-VI post-transition metal chalcogenides (InSe and GaSe) are a new class of layered semiconductors, which feature a strong variation of size and type of their band gaps as a function of number of layers (N). Here, we investigate…

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