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We study molecular beam epitaxially grown, undoped Al$_{x}$Ga$_{1-x}$Sb/InAs/AlSb quantum wells with different buffer and barrier designs and varying quantum well width. The highest mobilities were achieved with Al$_{0.33}$Ga$_{0.67}$Sb…

The growth and the density dependence of the low temperature mobility of a series of two-dimensional electron systems confined to un-intentionally doped, low extended defect density InAs quantum wells with Al$_{1-x}$Ga$_{x}$Sb barriers are…

We have investigated low-temperature electronic transport on InAs/GaSb double quantum wells, a system which promises to be electrically tunable from a normal to a topological insulator. Hall bars of $50\,\mu$m in length down to a few $\mu$m…

We report the magnetoresistance characteristics of one-dimensional electrons confined in a single InAs quantum well sandwiched between AlSb barriers. As a result of a novel nanofabrication scheme that utilizes a 3nm-shallow wet chemical…

We present molecular beam epitaxial grown single- and double-side $\delta$-doped InAlSb/InSb quantum wells with varying distances down to 50 nm to the surface on GaSb metamorphic buffers. We analyze the surface morphology as well as the…

We have studied experimentally the low temperature conductivity of mesoscopic size InAs/GaSb quantum well Hall bar devices in the inverted regime. Using a pair of electrostatic gates we were able to move the Fermi level into the…

We describe the influence of hard wall confinement and lateral dimension on the low temperature transport properties of long diffusive channels and ballistic crosses fabricated in an InSb/InxAl1-xSb heterostructure. Partially diffuse…

InSb is one of the promising candidates to realize a topological state through proximity induced superconductivity in a material with strong spin-orbit interactions. In two-dimensional systems, thin barriers are needed to allow strong…

Transport in InAs/GaSb heterostructures with different InAs layer thicknesses is studied using a six-terminal Hall bar geometry with a 2-$\mu$m edge channel length. For a sample with a 12-nm-thick InAs layer, non-local resistance…

We report the room temperature observation of significant ballistic electron transport in shallow etched four-terminal mesoscopic devices fabricated on an InSb/AlInSb quantum well (QW) heterostructure with a crucial partitioned…

We study the interlayer scattering mediated by long-range Coulomb interaction between electrons (density n) and holes (p) in a double-layer system. The gated device is made of InAs (e) and InGaSb (h) quantum wells separated by a AlSb middle…

High mobility, strong spin-orbit coupling, and large Land\'e g-factor make the two-dimensional electron gas (2DEG) in InAs quantum wells grown on nearly-lattice-matched GaSb substrates an attractive platform for mesoscopic quantum transport…

We present an experimental study of low temperature electronic transport in the hybridization gap of inverted InAs/GaSb composite quantum wells. Electrostatic gate is used to push the Fermi level into the gap regime, where the conductance…

Quantum spin Hall insulators (QSHIs) based on HgTe and three-layer InAs/GaSb quantum wells (QWs) have comparable bulk band-gaps of about 10--18~meV. The former however features a band-gap vanishing with temperature, while the gap in…

Mainstream among topological insulators, GaSb/InAs quantum wells present a broken gap alignment for the energy bands which supports the quantum spin Hall insulator phase and forms an important building block in the search of exotic states…

In this study, we present our experimental investigation on the magnetotransport properties of a two-dimensional electron system in GaAs quantum wells utilizing a variety of device geometries, including obstacles with thin barriers and…

The electrical transport properties of a bipolar InAs/GaSb system have been studied in magnetic field. The resistivity oscillates between insulating and metallic behaviour while the quantum Hall effect shows a digital character oscillating…

The two-dimensional topological insulator state in InAs/GaSb quantum wells manifests itself by topologically protected helical edge channel transport relying on an insulating bulk. This work investigates a way of suppressing bulk…

In an ideal InAs/GaSb bilayer of appropriate dimension in-plane electron and hole bands overlap and hybridize, and a topologically non-trivial, or quantum spin Hall (QSH) insulator, phase is predicted to exist. The in-plane dispersion's…

Strong magnetic barriers are defined in two-dimensional electron gases by magnetizing dysprosium ferromagnetic platelets on top of a Ga[Al]As heterostructure. A small resistance across the barrier is observed even deep inside the closed…