相关论文: Charge Offset Stability in Si Single Electron Devi…

The inter-device mismatch and intra-device temporal instability in the nanoscale CMOS circuits is examined from a unified point of view as a static and dynamic parts of the variability con-cerned with stochastic oxide charge trapping and…

We conduct a comprehensive study of anomalous charge transport in the quantum sine--Gordon model. Employing the framework of Generalized Hydrodynamics, we compute Drude weights and Onsager matrices across a wide range of coupling strengths…

We report on a comprehensive study of the transport, specific heat, magnetic susceptibility and optical spectroscopy on single crystal of Fe$_{1.05}$Te. We confirm that Fe$_{1.05}$Te undergoes a first-order phase transition near 65 K.…

Spin qubits in Silicon quantum dots can have long coherence times, yet their manipulation relies on the exchange interaction, through which charge noise can induce decoherence. Charge traps near the interface of a Si heterostructure lead to…

Exchange coupled {\it spin} qubits in semiconductor nanostructures are shown to be vulnerable to dephasing caused by {\it charge noise} invariably present in the semiconductor environment. This decoherence of exchange gate by environmental…

A new azobenzene-thiophene molecular switch is designed, synthesized and used to form self-assembled monolayers (SAM) on gold. An "on/off" conductance ratio up to 7x1E3 (with an average value of 1.5x1E3) is reported. The "on" conductance…

Alkali metal anodes paired with solid ion conductors offer promising avenues for enhancing battery energy density and safety. To facilitate rapid ion transport crucial for fast charging and discharging, it is essential to understand point…

The tremendous progress in Metal Oxide Semiconductor (MOS) technology has been a direct consequence of device scaling for past several decades. But as we have entered the nanometer era many problems related to leakage currents and other…

We report observations of discrete charge states of a coherent dielectric two-level system (TLS) that is strongly coupled to an offset-charge-sensitive superconducting transmon qubit. We measure an offset charge of 0.072$e$ associated with…

We report experiment and theory on an ambipolar gate-controlled Si-vacuum field effect transistor (FET) where we study electron and hole (low-temperature 2D) transport in the same device simply by changing the external gate voltage to tune…

We report the investigation of a single quantum dot charge storage device. The device allows selective optical charging of a single dot with electrons, storage of these charges over timescales much longer than microseconds and reliable…

We present first principles calculations based on density functional theory for the conductance of monatomic Al wires between Al(111) electrodes. In contrast to the even-odd oscillations observed in other metallic wires, the conductance of…

Understanding how practical lithium storage capacity varies with charge-discharge rate is crucial for designing durable anode free lithium batteries. We examine the lithiation behavior of single element metal electrodes-Al (alloying), Mg…

We present electrical data of silicon single electron devices fabricated with CMOS techniques and protocols. The easily tuned devices show clean Coulomb diamonds at T = 30 mK and charge offset drift of 0.01 e over eight days. In addition,…

Understanding the process of electron tunneling in chirality-induced single-molecule junctions is imperative for the development of nanoscale switching and artificial nanomotors. Based on the combined non-equilibrium Green functions…

Short-term reliability and robustness of 110 nm AlN/GaN HEMTs has been evaluated by means of off-state, semi-on state and on-state step stress tests on devices having different gate-drain distance, LGD. While breakdown voltages and critical…

Radio-frequency reflectometry in silicon single-electron transistors (SETs) is presented. At low temperatures (<4 K), in addition to the expected Coulomb blockade features associated with charging of the SET dot, quasi-periodic oscillations…

We report electronic transport on n-type silicon Single Electron Transistors (SETs) fabricated in Complementary Metal Oxide Semiconductor (CMOS) technology. The n-MOSSETs are built within a pre-industrial Fully Depleted Silicon On Insulator…

We present an improved fabrication process for overlapping aluminum gate quantum dot devices on Si/SiGe heterostructures that incorporates low-temperature inter-gate oxidation, thermal annealing of gate oxide, on-chip electrostatic…

We report on the operation of a single electron trap comprising a chain of four Al/AlOx/Al tunnel junctions attached, at one side, to a memory island and, at the other side, to a miniature on-chip Cr resistor R=50 kOhm which served to…