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Hydrogen point defects in silicon still hold unsolved problems, whose disclosure is fundamental for future advances in Si technologies. Among the open issues is the mechanism for the condensation of atomic hydrogen into molecules in Si…

材料科学 · 物理学 2022-04-29 Diana Gomes , Vladimir P. Markevich , Anthony R. Peaker , José Coutinho

Hydrogenated silicenes possess peculiar properties owing to the strong H-Si bonds, as revealed by an investigation using first principles calculations. The various charge distributions, bond lengths, energy bands, and densities of states…

材料科学 · 物理学 2015-10-28 Shih-Yang Lin , Shen-Lin Chang , Ngoc Thanh Thuy Tran , Po-Hua Yang , Ming-Fa Lin

Amorphous hydrogenated silicon (a-Si:H) is an important material for surface defect passivation of photovoltaic silicon (Si) wafers in order to reduce their recombination losses. The material is however unstable with regards to hydrogen (H)…

We report first principles ab initio density functional calculations of hydrogen dynam- ics in hydrogenated amorphous silicon. Thermal motion of the host Si atoms drives H diffusion, as we demonstrate by direct simulation and explain with…

材料科学 · 物理学 2009-11-11 T. A. Abtew , F. Inam , D. A. Drabold

Hydrogenated amorphous silicon (a-Si:H) has had a long standing role as a passivating dielectric for c-Si, often utilized in the early development of ICs and more recently for Si solar cells. Although it has been studied for more than 60…

材料科学 · 物理学 2025-01-14 Andrew Diggs , Zitong Zhao , Adam Goga , Zachary Crawford , Gergely T. Zimanyi

An H atom inserted into hydrogen monolayer on the Si(100)-2x1 surface has been studied using the density functional theory. Hydrogen-induced defects were considered in their neutral, negative, and positive charge states. It was found that…

介观与纳米尺度物理 · 物理学 2020-10-28 T. V. Pavlova

In the paper, the processes occurring during low-temperature growth of non-hydrogenated amorphous Si and polycrystalline Si films on multilayer Si$_3$N$_4$/SiO$_2$/c-Si substrates from molecular beams under conditions of ultrahigh vacuum…

We deposit intrinsic hydrogenated amorphous silicon (a-Si:H) thin films by reactive pulsed laser deposition, for various hydrogen pressures in the 0-20 Pa range, at a low deposition temperature of 120C, and investigate the hydrogen…

材料科学 · 物理学 2017-04-17 A. Mellos , M. Kandyla , D. Palles , M. Kompitsas

While Si clathrates have been explored as promising direct bandgap semiconductors, their practical optoelectronic performance has been limited by high doping levels and structural defects. Hydrogen has long been used to improve the…

We examine the effects of the low-level substitution of S atoms by C and Si atoms on the superconductivity of H$_3$S with the $Im\bar{3}m$ structure at megabar pressure. The hole doping can fine-tune the Fermi energy to reach the electronic…

超导电性 · 物理学 2020-12-17 Yanfeng Ge , Fan Zhang , Ranga P. Dias , Russell J. Hemley , Yugui Yao

The present work is essentially focused on the study of optical and structural properties of hydrogenated amorphous silicon thin films (a-Si:H) prepared by radio-frequency cathodic sputtering. We examine separately the influence of hydrogen…

材料科学 · 物理学 2007-05-23 A. Barhdadi , M. Chafik El Idrissi

Silicon films doped with Er and O were prepared by techniques of physical vapor deposition on crystalline silicon, ion beam mixing and oxygen incorporation through Ar+ and O2+ implantation, and thermal annealing. Processing steps were…

材料科学 · 物理学 2012-02-03 Sufian Abedrabbo , Anthony Fiory

This paper presents an $ab$ $initio$ study of hydrogen dynamics inside nanometer-size voids in $a$-Si within the framework of the density-functional theory for a varying hydrogen load of 10 to 30 H atoms/void at the low and high temperature…

材料科学 · 物理学 2021-10-04 Parthapratim Biswas , Dil Limbu

Mercury-Sensitized Photo-Assisted Chemical Vapor Deposition (Hg-Photo-CVD) technique opens new possibilities for reducing thin film growth temperature and producing novel semiconductor materials suitable for the future generation of high…

材料科学 · 物理学 2007-05-23 A. Barhdadi , S. Karbal , N. Mgafad , A. Benmakhlouf , M. Chafik El Idrissi , B. M. Aka

Superconducting resonators used in millimeter-submillimeter astronomy would greatly benefit from deposited dielectrics with a small dielectric loss. We deposited hydrogenated amorphous silicon films using plasma-enhanced chemical vapor…

Hydrogenated amorphous carbon (a-C:H) has been proposed as one of the carbonaceous solids detected in the interstellar medium. Energetic processing of the a-C:H particles leads to the dissociation of the C-H bonds and the formation of…

地球与行星天体物理 · 物理学 2016-06-22 Rafael Martín-Doménech , Emmanuel Dartois , Guillermo M. Muñoz Caro

The dielectric properties of noncrystalline hafnium silicon oxynitride (HfSiON) films with a variety of atomic compositions were investigated. The films were deposited by reactive sputtering of Hf and Si in an O, N, and Ar mixture ambient.…

The energy demands for the growing development of society need to be catered with alternative and green fuels like hydrogen energy for a lasting and sustainable culture. One essential component of the hydrogen economy is the efficiency of…

材料科学 · 物理学 2023-03-07 Mukesh Singh , Alok Shukla , Brahmananda Chakraborty

We have studied the effects of oxygen on hydrogenated amorphous/crystalline silicon films in terms of their structural and optical properties. Different hydrogenated silicon oxide (SiO:H) and silicon (Si:H) films are fabricated between…

材料科学 · 物理学 2021-03-17 Meenakshi Rana , Chandan Banerjee , Papia Chowdhury

The efficiency of silicon solar cells gradually decreases in various environments, with humidity being a key factor contributing to this decline through moisture-induced degradation (MID) involving multiple mechanisms including encapsulant…

材料科学 · 物理学 2026-03-13 Bo Li , Feifei Zhang , Yu Pang , Jinyu Hu , Huiyan Zhao , Guocai Liu , Chao He , Xingtao An
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