相关论文: Topological surface states of strained Mercury-Tel…

The topological surface states of mercury telluride (HgTe) are studied by ab initio calculations assuming different strains and surface terminations. For the Te-terminated surface, a single Dirac cone exists at the $\Gamma$ point. The Dirac…

We present the theory describing the various surface electronic states arisen from the mixing of conduction and valence bands in a strained mercury telluride (HgTe) bulk material. We demonstrate that the strain-induced band gap in the…

We have performed angle-resolved photoemission spectroscopy (ARPES) on the (111) surface of the topological crystalline insulator SnTe. Distinct from a pair of Dirac-cone surface states across the X_bar point of the surface Brillouin zone…

Angle resolved photoelectron spectroscopy (ARPES) is extensively used to characterize the dependence of the electronic structure of graphene on Ir(111) on the preparation process. ARPES findings reveal that temperature programmed growth…

We have performed angle-resolved photoemission spectroscopy (ARPES) on layered ternary compounds ZrGeXc (Xc = S, Se, and Te) with square Ge lattices. ARPES measurements with bulk-sensitive soft-x-ray photons revealed a quasi-two-dimensional…

Topological insulators are bulk semiconductors that manifest in-gap massless Dirac surface states due to the topological bulk-boundary correspondence principle [1-3]. These surface states have been a subject of tremendous ongoing interest,…

The experimental discovery of the topological Dirac semimetal establishes a platform to search for various exotic quantum phases in real materials. ZrSiS-type materials have recently emerged as topological nodal-line semimetals where gapped…

Two-dimensional electrides can acquire topologically non-trivial phases due to intriguing interplay between the cationic atomic layers and anionic electron layers. However, experimental evidence of topological surface states has yet to be…

The high Tc superconductor FeTe0.55Se0.45 has recently been shown to support a surface state with topological character. Here we use low-energy laser-based ARPES with variable light polarization, including both linear and circular…

ARPES studies of the protected surface states in the Topological Insulator $% Bi_{2}Te_{3}$ have revealed the existence of an important hexagonal warping term in its electronic band structure. This term distorts the shape of the Dirac cone…

We report a detailed experimental study of the band structure of the recently discovered topological material $\textrm{Hf}_{2}\textrm{Te}_2\textrm{P}$. Using the combination of scanning tunneling spectroscopy and angle-resolved…

High resolution angle-resolved photoemission measurements have been carried out on transition metal dichalcogenide PdTe2 that is a superconductor with a Tc at 1.7 K. Combined with theoretical calculations, we have discovered for the first…

We performed time- and polarization-resolved extreme ultraviolet momentum microscopy on topological Dirac semimetal candidate 1T-ZrTe$_2$. Excited states band mapping uncovers the previously inaccessible linear dispersion of the Dirac cone…

We present a magneto-optical study of the three-dimensional topological insulator, strained HgTe using a technique which capitalizes on advantages of time-domain spectroscopy to amplify the signal from the surface states. This measurement…

We report magnetotransport studies on a gated strained HgTe device. This material is a threedimensional topological insulator and exclusively shows surface state transport. Remarkably, the Landau level dispersion and the accuracy of the…

The electronic structure of iron pnictides is topologically nontrivial, leading to the appearance of Dirac cones in the band structure for the antiferromagnetic phase. Motivated by the analogy with Dirac cones in graphene, we explore the…

We have investigated several strong spin-orbit coupling ternary chalcogenides related to the (Pb,Sn)Te series of compounds. Our first-principles calculations predict the low temperature rhombohedral ordered phase in TlBiTe2, TlBiSe2, and…

The opening of a band gap due to compressive uniaxial strain renders bulk HgTe a strong three-dimensional topological insulators with protected gapless surface states at any surface. By employing a six-band k.p model, we determine the spin…

Knowing the band structure of materials is one of the prerequisites to understand their properties. Therefore, especially in the last decades, angle-resolved photoemission spectroscopy (ARPES) has become a highly demanded experimental tool…

We developed the theory which describes the Floquet engineering of surface electronic modes in bulk mercury telluride (HgTe) by a circularly polarized electromagnetic field. The analysis shows that the field results in appearance of the…