相关论文: Defect recombination induced by density-activated …
Electron transfer to an individual quantum dot promotes the formation of charged excitons with enhanced recombination pathways and reduced lifetimes. Excitons with only one or two extra charges have been observed and exploited for very…
We analyze the potential of the $c$-plane InGaN/GaN quantum dots for polarization entangled photon emission by means of an atomistic many-body framework. Special attention is paid to the impact of random alloy fluctuations on the excitonic…
We report on the influence of the quantum well thickness on the effective band gap and conversion efficiency of In0.12Ga0.88N/GaN multiple quantum well solar cells. The band-to-band transition can be redshifted from 395 to 474 nm by…
In this work, we propose an efficient quantum-enhanced solid-state photocell based on GaN quantum dots. We exploit the strong built-in electric field in GaN QDs and excitonic dipole-dipole coupling between adjacent QDs to break detailed…
Identification of complex defect has been a long-sought-after physics problem for controlling the defect population and engineering the useful properties in wide bandgap oxide semiconductors. Here we report a systematic study of (GaZn-VZn)-…
Localization lengths of the electrons and holes in InGaN/GaN quantum wells have been calculated using numerical solutions of the effective mass Schr\"odinger equation. We have treated the distribution of indium atoms as random and found…
We report low-temperature magneto-transport measurements of an undoped Si/SiGe asymmetric double quantum well heterostructure. The density in both layers is tuned independently utilizing a top and a bottom gate, allowing the investigation…
This work addresses nucleation rates in systems with strong initial recombination. Initial (or `geminate') recombination is a process where a dissociated structure (anion, vortex, kink etc.) recombines with its twin brother (cation,…
We report on transport characteristics of field effect two-dimensional electron gases (2DEG) in surface indium antimonide quantum wells. The topmost 5 nm of the 30 nm wide quantum well is doped and shown to promote the formation of…
Cooperative spontaneous recombination (superfluorescence) of electron-hole plasmas in semiconductors has been a challenge to observe due to ultrafast decoherence. We argue that superfluorescence can be achieved in quantum-confined…
The performance of several common approximations for the exchange-correlation kernel within time-dependent density-functional theory is tested for elementary excitations in the homogeneous electron gas. Although the adiabatic local-density…
We report on two pulse, degenerate four wave mixing (DFWM) measurements on shallow InGaN/GaN multi-quantum wells (MQWs) grown on sapphire substrates. These reveal pulse length limited signal decays. We have found a 10:1 resonant enhancement…
We report on the enhancement of the spontaneous emission in the visible red spectral range from site-controlled InP/GaInP quantum dots by resonant coupling to Tammplasmon modes confined beneath gold disks in a hybrid metal/semiconductor…
We report ultrafast transient-grating experiments on heavily p-type InP at 15 K. Our measurement reveals the dynamics and diffusion of photoexcited electrons and holes as a function of their density n in the range 2E16 to 6E17 cm-3. After…
We present a comprehensive investigation of the polarization properties of non-polar a-plane InGaN quantum dots (QDs) and their origin with statistically significant experimental data and rigorous k.p modelling. The unbiased selection and…
We image the micro-electroluminescence (EL) spectra of self-assembled InAs quantum dots (QDs) embedded in the intrinsic region of a GaAs p-i-n diode and demonstrate optical detection of resonant carrier injection into a single QD. Resonant…
We report single-photon emission from electrically driven site-controlled InGaN/GaN quantum dots, fabricated from a planar light-emitting diode structure containing a single InGaN quantum well using a top-down approach. The location,…
A model including random alloy disorder is used to account for the outstanding optical properties of InGaN quantum wells (QW). The model provides excellent agreement to experimental observations on various structures. This study clarifies…
Identifying the behavior of photoexcited carriers is one method for empirically boosting their transfer efficiencies in doped double quantum dots (DQDs) photocells. The photoexcited carriers transfer qualities were assessed in this study by…
GaN defect-based quantum emitters show significant potential for quantum information technologies, yet their intrinsic nature is not fully understood. In this work, we present results on the temperature-dependent emission polarization of…