相关论文: Defect recombination induced by density-activated …

Active Galactic Nuclei (AGN) host powerful jets containing high-energy electrons and protons. The astrophysical environment where AGNs and their jets are found is characterized by large concentrations of both dark matter (DM) and…

InxGa1-xN disks in GaN nanowires (DINWs) have emerged as a viable technology for on-chip tunable visible spectrum emission without the use of a phosphor. Here we present a study of the optical emission and absorption dynamics in DINWs that…

Photo-excitation in solids can trigger a cascade in which multiple particle-hole excitations are generated. We analyze the carrier multiplication cascade of impact excitation processes in graphene and show that the number of pair…

Near-bandgap photoemission spectroscopy experiments were performed on p-GaN and p-InGaN/GaN photocathodes activated to negative electron affinity. The photoemission quantum yield of the InGaN samples drops by more than one order of…

Hot carrier solar cells aim to overcome the theoretical limit of single-junction photovoltaic devices by suppressing the thermalization of hot carriers and extracting them through energy selective contacts. Designing efficient hot carrier…

We present improved fits to our treatment of suppression of dielectronic recombination at intermediate densities. At low densities, most recombined excited states eventually decay to the ground state, and therefore the total dielectronic…

In this paper, we present a coupled carrier-photon model that accounts for the time-domain interactions between carrier transport and light emission in Gallium Nitride (GaN)-based LEDs that hasn't been reported so far. Carrier transport is…

We investigate the dependence of the electrical resistivity of $\sim 60 $nm thick single crystalline graphite samples on the defect concentration produced by proton irradiation at very low fluences. We show that the resistivity decreases…

Intersubband absorption in modulation-doped quantum wells is usually appropriately described as a collective excitation of the confined two-dimensional electron gas. At sufficiently low electron density and low temperatures, however, the…

A quantum kinetic theory is used to compute excitation induced dephasing in semiconductor quantum dots due to the Coulomb interaction with a continuum of states, such as a quantum well or a wetting layer. It is shown that a frequency…

We explore and systematically compare the morphological, structural and optical properties of GaN/(Al,Ga)N multiple quantum wells (MQWs) grown by plasma-assisted molecular beam epitaxy (PA-MBE) on freestanding GaN$(0001)$ and…

Gamma-ray flares from Active Galactic Nuclei (AGN) show substantial variability on ultrafast timescales (i.e. shorter than the light crossing time of the AGN's supermassive black hole). We propose that ultrafast variability is a byproduct…

A two-dimensional (2D) electron gas formed in a modulation-doped GaAs/AlGaAs single quantum well undergoes a first-order transition when the first excited subband is occupied with electrons, as the Fermi level is tuned into resonance with…

Fully-processed SiC power metal-oxide-semiconductor field-effect transistors (MOSFETs) emit light during switching of the gate terminal, while both drain and source terminals are grounded. The emitted photons are caused by defect-assisted…

Active galactic nucleus (AGN) jets are believed to be important in solving the cooling flow problem in the intracluster medium (ICM), while the detailed mechanism is still in debate. Here we present a systematic study on the energy coupling…

Core-shell nanorods (NRs) with InGaN/GaN quantum wells (QWs) are promising for monolithic white light-emitting diodes and multicolor displays. Such applications, however, are still a challenge because intensity of red band is too weak as…

We applied low temperature diffraction limited confocal optical microscopy to spatially resolve, and spectroscopically study photoluminescence from single self-assembled semiconductor quantum dots. Using selective wavelength imaging we…

Temperature dependence and recombination behavior of trapped charge carriers in ZnCdSe/ZnSe multiple quantum wells are investigated employing surface acoustic waves. These weakly perturb the carrier system, but remain highly sensitive even…

The defect induced interfacial states are created in an atomically thin two-dimensional molybdenum disulfide channel by underlying a narrow pattern of a graphene layer in a field effect transistor. Nondestructive method for the generation…

We investigate the thermal quenching of the multimodal photoluminescence from InAs/InP (001) self-assembled quantum dots. The temperature evolution of the photoluminescence spectra of two samples is followed from 10 K to 300 K. We develop a…