相关论文: Defect recombination induced by density-activated …
Solar cells employing quantum wells can enhance the light absorption but suffer from the difficulty in photogenerated carrier extraction. Here, we analyzed the spectral response and the photocarrier collection mechanism of p-i-n multiple…
The determination of the carrier diffusion length of semiconductors such as GaN and GaAs by cathodoluminescence imaging requires accurate knowledge about the spatial distribution of generated carriers. To obtain the lateral distribution of…
In this work, we have systematically studied the role of point defects in the recombination time of monolayer MoS$_2$ using time-dependent ab initio non-adiabatic molecular dynamics simulations. Various types of point defects, such as S…
Generating entangled graph states of qubits requires high entanglement rates, with efficient detection of multiple indistinguishable photons from separate qubits. Integrating defect-based qubits into photonic devices results in an enhanced…
We demonstrate evidence for a radiative recombination channel of dark excitons in self-assembled quantum dots. This channel is due to a light hole admixture in the excitonic ground state. Its presence was experimentally confirmed by a…
Defects in semiconductors, traditionally seen as detrimental to electronic device performance, have emerged as potential assets in quantum technologies due to their unique quantum properties. This study investigates the interaction between…
In this work, we have theoretically investigated the intermixing effect in highly strained In$_{0.3}$Ga$_{0.7}$As/GaAs quantum well (QW) taking into consideration the composition profile change resulting from in-situ indium surface…
new defect-assisted mechanism of multiphonon intraband carrier relaxation in semiconductor quantum dots, where the carrier is found in a coherent superposition of the initial, final, and defect states, is proposed. It is shown that this…
Zinc-diffusion can induce multiple failures in the electrical performance of a multijunction solar cell. In this work, we show an important Zn-diffusion from the AlGaInP back-surface-field layer to the emitter of the GaInP top cell of an…
We experimentally observe the effect of photo-generated carriers on the spectral diffusion of a quantum dot (QD) coupled to a photonic crystal (PC) cavity. In this system, spectral diffusion arises in part from charge fluctuations on the…
Periodically driven quantum many-body systems host unconventional behavior not realized at equilibrium. Here we investigate such a setup for strongly interacting spinless fermions on a chain, which at zero temperature and strong…
We investigate the long wavelength (1.2 to 1.55 micro-m) photoluminescence of high-density InAs quantum dots and dashes, which were grown on InP substrates. We analyze the temperature dependence of the recombination and carrier distribution…
We present a detailed theoretical analysis of the electronic structure of $c$-plane InGaN/GaN quantum wells with indium contents varying between 10\% and 25\%. The electronic structure of the quantum wells is treated by means of an…
Under optical excitation, coupled quantum wells are known to reveal fascinating features in the photoluminescence pattern originating from dipole orientated indirect excitons. The appearance of an external ring has been attributed to…
The use of low-dimensional structures such as quantum wells, wires or dots in the absorbing regions of solar cells strongly affects the spectral response of the latter, the spectral properties being drastically modified by quantum…
Auger recombination in semiconductors is a many-body phenomenon in which recombination of electrons and holes is accompanied by excitation of other charge carriers. Being nonradiative, it is detrimental to light emission. The excess energy…
Carrier transport in gated 2D graphene monolayers is theoretically considered in the presence of scattering by random charged impurity centers with density $n_i$. Excellent quantitative agreement is obtained (for carrier density $n >…
We present an atomistic description of the electronic and optical properties of $\text{In}_{0.25}\text{Ga}_{0.75}$N/GaN quantum wells. Our analysis accounts for fluctuations of well width, local alloy composition, strain and built-in field…
Defect-carrier interaction in transition metal dichalcogenides (TMDs) play important roles in carrier relaxation dynamics and carrier transport, which determines the performance of electronic devices. With femtosecond laser time-resolved…
Due to their band-structure and optical properties, InAs/InP quantum dots (QDs) constitute a promising system for single-photon generation at third telecom window of silica fibers and for applications in quantum communication networks.…