English

Site-controlled InGaN/GaN single-photon-emitting diode

Mesoscale and Nanoscale Physics 2016-05-04 v1
Authors: Lei Zhang , Chu-Hsiang Teng , Pei-Cheng Ku , Hui Deng
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Abstract

We report single-photon emission from electrically driven site-controlled InGaN/GaN quantum dots, fabricated from a planar light-emitting diode structure containing a single InGaN quantum well using a top-down approach. The location, dimension, and height of each single-photon-emitting diode are controlled lithographically, providing great flexibility for chip-scale integration.

Keywords

quantum dots

Cite

@article{arxiv.1602.02325,
  title  = {Site-controlled InGaN/GaN single-photon-emitting diode},
  author = {Lei Zhang and Chu-Hsiang Teng and Pei-Cheng Ku and Hui Deng},
  journal= {arXiv preprint arXiv:1602.02325},
  year   = {2016}
}

Comments

6 figures

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