Single Photon Emission from Site-Controlled InGaN/GaN Quantum Dots

Lei Zhang; Chu-Hsiang Teng; Tyler A. Hill; Leung-Kway Lee; Pei-Cheng Ku; Hui Deng

doi:10.1063/1.4830000

Single Photon Emission from Site-Controlled InGaN/GaN Quantum Dots

Optics 2015-06-17 v2 Mesoscale and Nanoscale Physics Quantum Physics

Authors: Lei Zhang , Chu-Hsiang Teng , Tyler A. Hill , Leung-Kway Lee , Pei-Cheng Ku , Hui Deng

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Abstract

Single photon emission was observed from site-controlled InGaN/GaN quantum dots. The single-photon nature of the emission was verified by the second-order correlation function up to 90 K, the highest temperature to date for site-controlled quantum dots. Micro-photoluminescence study on individual quantum dots showed linearly polarized single exciton emission with a lifetime of a few nanoseconds. The dimensions of these quantum dots were well controlled to the precision of state-of-the-art fabrication technologies, as reflected in the uniformity of their optical properties. The yield of optically active quantum dots was greater than 90%, among which 13%-25% exhibited single photon emission at 10 K.

Keywords

single-photon sources quantum dots quantum optics spontaneous emission

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@article{arxiv.1308.5908,
  title  = {Single Photon Emission from Site-Controlled InGaN/GaN Quantum Dots},
  author = {Lei Zhang and Chu-Hsiang Teng and Tyler A. Hill and Leung-Kway Lee and Pei-Cheng Ku and Hui Deng},
  journal= {arXiv preprint arXiv:1308.5908},
  year   = {2015}
}

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6 pages, 4 figures, 1 table

Single Photon Emission from Site-Controlled InGaN/GaN Quantum Dots

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