English

Single-photon emission from the natural quantum dots in the InAs/GaAs wetting layer

Mesoscale and Nanoscale Physics 2011-09-27 v1

Abstract

Time-resolved microphotoluminescence study is presented for quantum dots which are formed in the InAs/GaAs wetting layer. These dots are due to fluctuations of In composition in the wetting layer. They show spectrally sharp luminescence lines with a low spatial density. We identify lines related to neutral exciton and biexciton as well as trions. Exciton emission antibunching (second order correlation value of g^2(0)=0.16) and biexciton-exciton emission cascade prove non-classical emission from the dots and confirm their potential as single photon sources.

Keywords

Cite

@article{arxiv.1107.4085,
  title  = {Single-photon emission from the natural quantum dots in the InAs/GaAs wetting layer},
  author = {T. Kazimierczuk and A. Golnik and P. Kossacki and J. Gaj and Z. Wasilewski and A. Babinski},
  journal= {arXiv preprint arXiv:1107.4085},
  year   = {2011}
}