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相关论文: Localization at the Edge of 2D Topological Insulat…

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We investigate the electrical switching of charge and spin transport in a topological insulator nanoconstriction in a four terminal device. The switch of the edge channels is caused by the coupling between edge states which overlap in the…

介观与纳米尺度物理 · 物理学 2013-08-12 F. Romeo , R. Citro , D. Ferraro , M. Sassetti

We show that the interplay between chiral tunneling and spin-momentum locking of helical surface states leads to spin amplification and filtering in a 3D Topological Insulator (TI). Chiral tunneling across a TI pn junction allows normally…

介观与纳米尺度物理 · 物理学 2015-03-23 K. M. Masum Habib , Redwan N. Sajjad , Avik W. Ghosh

Recently, a new family of symmetry-protected higher-order topological insulators has been proposed and was shown to host lower-dimensional boundary states. However, with the existence of the strong disorder in the bulk, the crystal symmetry…

介观与纳米尺度物理 · 物理学 2021-04-14 Weixuan Zhang , Deyuan Zou , Qingsong Pei , Wenjing He , Jiacheng Bao , Houjun Sun , Xiangdong Zhang

Understanding the ability of particles to maneuver through disordered environments is a central problem in innumerable settings, from active matter and biology to electronics. Macroscopic particles ultimately exhibit diffusive motion when…

流体动力学 · 物理学 2024-09-18 Abel J. Abraham , Stepan Malkov , Frane A. Ljubetic , Matthew Durey , Pedro J. Sáenz

Electrical currents at the surface or edge of a topological insulator are intrinsically spin-polarized. We show that such surface/edge currents can be used to switch the orientation of a molecular magnet weakly coupled to the surface or…

介观与纳米尺度物理 · 物理学 2017-04-05 Elina Locane , Piet W. Brouwer

We report localized and unidirectional nonlinear traveling edge waves discovered theoretically and numerically in a 2D mechanical (phononic) topological insulator. The lattice consists of a collection of pendula with weak Duffing…

斑图形成与孤子 · 物理学 2018-05-09 David D. J. M. Snee , Yi-Ping Ma

We examine the transport properties of magnetically doped topological insulator (TI) thin films subject to correlated non-magnetic disorder. For the disorder we choose a quasi-periodic potential with a random phase. We restrict the disorder…

介观与纳米尺度物理 · 物理学 2022-07-26 Takuya Okugawa , Tanay Nag , Dante M. Kennes

We study the disorder effect on the transport properties in the HgTe/CdTe semiconductor quantum wells. We confirm that at a moderate disorder strength, the initially un-quantized two terminal conductance becomes quantized, and the system…

介观与纳米尺度物理 · 物理学 2015-05-13 Hua Jiang , Lei Wang , Qing-feng Sun , X. C. Xie

Motivated by the recent experimental realization of the topological Anderson insulator and research interest on the topological quasicrystal lattices, we investigate the effects of disorder on topological properties of a two-dimensional…

介观与纳米尺度物理 · 物理学 2019-09-30 Rui Chen , Dong-Hui Xu , Bin Zhou

Anderson localization is a general phenomenon of wave physics, which stems from the interference between multiple scattering paths1,2. It was originally proposed for electrons in a crystal, but later was also observed for light3-5,…

强关联电子 · 物理学 2012-08-21 B. Y. Pan , S. Y. Zhou , X. C. Hong , X. Qiu , S. Y. Li

The possibility of realizing topological insulators by spontaneous formation of electronic superstructure is theoretically investigated in a minimal two-orbital model including both the spin-orbit coupling and electron correlations on a…

强关联电子 · 物理学 2016-06-21 Yusuke Sugita , Yukitoshi Motome

Typically the disorder that alters the interference of particle waves to produce Anderson localization is potential scattering from randomly placed impurities. Here we show that disorder in the form of random gauge fields that act directly…

超导电性 · 物理学 2015-11-26 H. Q. Nguyen , S. M. Hollen , J. M. Valles , J. Shainline , J. M. Xu

We investigate magnetic properties induced by a spinless impurity in strongly correlated electron systems, i.e. the Hubbard model in the spatial dimension $D=1,2,$ and 3. For the 1D system exploiting the Bethe ansatz exact solution we find…

强关联电子 · 物理学 2009-10-31 Satoshi Fujimoto

The effect of disorder on magnonic transport in low-dimensional magnetic materials is studied in the framework of a classical spin model. Numerical investigations give insight into scattering properties of the systems and show the existence…

介观与纳米尺度物理 · 物理学 2015-07-24 Martin Evers , Cord A. Müller , Ulrich Nowak

Occurrence of topological Anderson insulator (TAI) in HgTe quantum well suggests that when time-reversal symmetry (TRS) is maintained, the pertinent topological phase transition, marked by re-entrant $2e^2/h$ quantized conductance…

介观与纳米尺度物理 · 物理学 2016-07-06 Ying Su , Y. Avishai , X. R. Wang

Dyson insulators with random hoppings in a lattice approach localization faster compared to the usual Anderson insulators with site disorder. For even-$N$ lattice sites the Dyson insulators mimic topological insulators with a pseudo-gap at…

无序系统与神经网络 · 物理学 2020-07-09 G. T. Stamatiou , S. N. Evangelou

The behavior of two magnetic impurities coupled to correlated electrons in one dimension is studied using the DMRG technique for several fillings. On-site Coulomb interactions among the electrons lead to a small Kondo screening cloud and an…

强关联电子 · 物理学 2009-10-30 Karen Hallberg , Reinhold Egger

We study the nature of the disorder-induced quantized conductance, i.e., the phenomena of topological Anderson insulator (TAI) induced in HgTe/CdTe semiconductor quantum well. The disorder effect in several different systems where anomalous…

介观与纳米尺度物理 · 物理学 2015-05-30 Yanxia Xing , Lei Zhang , Jian Wang

We study backscattering of electrons and conductance suppression in a helical edge channel in two-dimensional topological insulators with broken axial spin symmetry in the presence of nonmagnetic point defects that create bound states. In…

介观与纳米尺度物理 · 物理学 2021-04-28 Vladimir A. Sablikov , Aleksei A. Sukhanov

The spin-dependent scattering process in a system of topological insulator and quantum dot is studied. The unitary scattering process is viewed as a gate transformation applied to an initial state of two electrons. Due to the randomness…