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We present a theoretical study of electronic and thermal transport in polycrystalline heterostructures combining graphene (G) and hexagonal boron nitride (hBN) grains of varying size and distribution. By increasing the hBN grain density…

介观与纳米尺度物理 · 物理学 2025-06-06 J. E. Barrios Vargas , B. Mortazavi , A. W. Cummings , R. Martinez-Gordillo , M. Pruneda , L. Colombo , T. Rabczuk , S. Roche

We introduce an interatomic potential for hexagonal boron nitride (hBN) based on the Gaussian approximation potential (GAP) machine learning methodology. The potential is based on a training set of configurations collected from density…

材料科学 · 物理学 2020-10-06 Fabian L. Thiemann , Patrick Rowe , Erich A. Müller , Angelos Michaelides

Two-dimensional materials are characterised by a number of unique physical properties which can potentially make them useful to a wide diversity of applications. In particular, the large thermal conductivity of graphene and hexagonal boron…

Hexagonal boron nitride (hBN) and black phosphorus (bP) are crystalline materials that can be seen as ordered stackings of two-dimensional layers, which lead to outstanding anisotropic physical properties. The knowledge of the thermal…

Chemical and structural diversity present in hexagonal boron nitride ((h-BN) and graphene hybrid nanostructures provide new avenues for tuning various properties for their technological applications. In this paper we investigate the…

材料科学 · 物理学 2015-06-11 Alper Kinaci , Justin B. Haskins , Cem Sevik , Tahir Cagin

Single layer hexagonal boron nitride is produced on 2 inch Pt(111)/sapphire wafers. The growth with borazine vapour deposition at process temperatures between 1000 and 1300 K is in-situ investigated by photoelectron yield measurements. The…

材料科学 · 物理学 2021-05-18 Adrian Hemmi , Huanyao Cun , Steven Brems , Cedric Huyghebaert , Thomas Greber

Monolayer-thick hexagonal boron nitride (h-BN) is grown on graphene on SiC(0001), by exposure of the graphene to borazine, (BH)3(NH)3, at 1100 C. The h-BN films form ~2-micrometer size grains with a preferred orientation of 30 degrees…

介观与纳米尺度物理 · 物理学 2018-08-15 Patrick C. Mende , Jun Li , Randall M. Feenstra

Aiming to improve fabrication protocols for boron nitride and graphene (h-BNG) lateral heterostructures, we studied the growth of h-BNG thin films on platinum and their behavior in an oxygen environment. We employed a surface science…

Hexagonal boron nitride (h-BN) is a promising two-dimensional insulator with a large band gap and low density of charged impurities that is isostructural and isoelectronic with graphene. Here we report the chemical and atomic-scale…

The thickness and interfacial geometry of hexagonal boron nitride (hBN) films grown by chemical vapor deposition on polycrystalline nickel foils is studied using low-energy electron microscopy (LEEM). The reflectivity of the electrons,…

介观与纳米尺度物理 · 物理学 2017-09-22 P. C. Mende , Q. Gao , A. Ismach , H. Chou , M. Widom , R. Ruoff , L. Colombo , R. M. Feenstra

The relative twist angle in heterostructures of two-dimensional (2D) materials with similar lattice constants result in a dramatic alteration of the electronic properties. Here, we investigate the electrical and magnetotransport properties…

介观与纳米尺度物理 · 物理学 2021-06-09 Manabendra Kuiri , Saurabh Kumar Srivastav , Sujay Ray , Kenji Watanabe , Takashi Taniguchi , Tanmoy Das , Anindya Das

We investigate interlayer adhesion and relaxation at interfaces between graphene and hexagonal boron nitride (hBN) monolayers in van der Waals heterostructures. The adhesion potential between graphene and hBN is calculated as a function of…

Graphite and hexagonal boron nitride (h-BN) are two prominent members of the family of layered materials possessing a hexagonal lattice. While graphite has non-polar homo-nuclear C-C intra-layer bonds, h-BN presents highly polar B-N bonds…

材料科学 · 物理学 2012-04-16 Oded Hod

The recent progress in the growth of large-area boron nitride epilayers opens up new possibilities for future applications. However, it remains largely unclear how weakly attached two-dimensional BN layers interact with their substrate and…

The effect of an hexagonal boron nitride (hBN) layer close aligned with twisted bilayer graphene (TBG) is studied. At sufficiently low angles between twisted bilayer graphene and hBN, $\theta_{hBN} \lesssim 2^\circ$, the graphene electronic…

强关联电子 · 物理学 2020-10-28 Tommaso Cea , Pierre A. Pantaleon , Francisco Guinea

There is a large discrepancy between the experimental observations and the theoretical predictions in the morphology of hexagonal boron nitride (h-BN) nanosheets. Theoretically-predicted hexagons terminated by armchair edges are not…

材料科学 · 物理学 2018-08-31 Jingzhao Zhang , Wenjing Zhao , Junyi Zhu

Encapsulating graphene in hexagonal Boron Nitride has several advantages: the highest mobilities reported to date are achieved in this way, and precise nanostructuring of graphene becomes feasible through the protective hBN layers.…

介观与纳米尺度物理 · 物理学 2021-01-04 Yongping Du , Ning Xu , Xianqing Lin , Antti-Pekka Jauho

Hexagonal boron nitride (h-BN) has attracted significant attention due to its superior properties as well as its potential as an ideal dielectric layer for graphene-based devices. The h-BN films obtained via chemical vapor deposition in…

Hexagonal boron nitride (h-BN) has received great interest in recent years as a wide bandgap analog of graphene-derived systems. However, the thermal transport properties of h-BN, which can be critical for device reliability and…

介观与纳米尺度物理 · 物理学 2018-07-04 Puqing Jiang , Xin Qian , Ronggui Yang , Lucas Lindsay

Hexagonal boron nitride (h-BN) is a natural hyperbolic material, for which the dielectric constants are the same in the basal plane (epsilon^t = epsilon^x = epsilon^y) but have opposite signs (epsilon^t*epsilon^z < 0) from that in the…