相关论文: Bulk and Surface Tunneling Hydrogen Defects in Alu…
Tomonaga-Luttinger liquid (TLL) behavior in one-dimensional systems has been predicted and shown to occur at semiconductor-to-metal transitions within two-dimensional materials. Reports of one-dimensional defects hosting a Fermi liquid or a…
Specific heat measurements from 2 to 300 K of hydrogenated amorphous silicon prepared by hot-wire chemical vapor deposition show a large excess specific heat at low temperature, significantly larger than the Debye specific heat calculated…
We investigate quantum tunneling of charge carriers through a periodic superlattice in twisted bilayer graphene (TBG) with rectangular potential barriers, including the presence of a defect, using a low-energy continuum model. Transmission…
A theory of transport in the quantum Hall regime is developed for separately contacted double-layer electron systems. Inter-layer tunneling provides a channel for equilibration of the distribution functions in the two layers at the edge…
Reliable nebular emission line diagnostics are essential for accurately inferring the physical properties (e.g. electron temperature, density, pressure, and metallicity) of H II regions from spectra. When interpreting spectra, it is typical…
Defects in solid-state materials play a central role in determining coherence, stability, and performance in quantum technologies. Although narrowband techniques can probe specific resonances with high precision, a broadband spectroscopic…
The energetic cost of creating a defect within a host material is given by the formation energy. Here we present a formulation allowing the calculation of formation energies in one-dimensional nanostructures, which overcomes the…
Surface distributions of two level system (TLS) defects and magnetic vortices are limiting dissipation sources in superconducting quantum circuits. Arrays of flux-trapping holes are commonly used to eliminate loss due to magnetic vortices,…
The influence of departures from local thermodynamic equilibrium (LTE) on neutral sulfur lines is considered. A grid of corrections is proposed to take into account the influence of departures from LTE for neutral sulfur lines in the…
This paper details a complete formalism for calculating electron subband energy and degeneracy in strained multi-valley quantum wells grown along any orientation with explicit results for the AlAs quantum well case. A standardized rotation…
We present a dry surface treatment combining atomic layer etching and deposition (ALE and ALD) to mitigate dielectric loss in fully fabricated superconducting quantum devices formed from aluminum thin films on silicon. The treatment,…
We present tables for the bound-state energies for atomic hydrogen. The tabulated energies include the hyperfine structure, and thus this work extends the work of Rev. Mod. Phys. {\bf 84}, 1527 (2012), which excludes hyperfine structure.…
The coexistence of semiconducting (2H) and metallic (1T) phases of MoS$_{2}$ monolayers have further pushed their strong potential for applications in the next generation of electronic devices based on the two-dimensional lateral…
We investigate the formation of topological defects in the course of a dynamical phase transition with different boundary conditions in a ring from AdS/CFT correspondence. According to the Kibble-Zurek mechanism, quenching the system across…
Two-level systems (TLS) are an important, if not dominant, source of loss and noise for superconducting resonators such as those used in kinetic inductance detectors and some quantum information science platforms. They are similarly…
This study investigates hydrogen permeation in titanium aluminium nitride (TiAlN) using ab initio density functional theory (DFT) for cubic and hexagonal crystal structures. Despite the significance of hydrogen barriers, the potential of…
We realize a two-dimensional electron system (2DES) in ZnO by simply depositing pure aluminum on its surface in ultra-high vacuum, and characterize its electronic structure using angle-resolved photoemission spectroscopy. The aluminum…
Materials imperfections in Nniobium based superconducting quantum circuits, in particular, two-level-system (TLS) defects, are a major source of decoherence, ultimately limiting the performance of quantum computation and sensing. Thus,…
While two levels systems (TLSs) are ubiqitous in solid state systems, microscopic understanding of their nature remains an outstanding problem. Conflicting phenomenological models are used to describe TLSs in seemingly similar materials…
Defects ~10 nm in size, with number densities ~10^{10} cm^{-2}, form spontaneously beneath ion-milled, etched, or HF-dipped silicon surfaces examined in our Ti-ion getter-pumped transmission electron microscope (TEM) after exposure to air.…