相关论文: Bulk and Surface Tunneling Hydrogen Defects in Alu…
Layered semiconductors have recently emerged as capable host materials for novel quantum applications ranging from phonics to sensing. Most studies have focused on artificial layered materials, while natural layered materials, such as talc…
Tow-level system (TLS) loss in amorphous dielectric materials has been intensively studied at millikelvin temperatures due to its impact on superconducting qubit devices and incoherent detectors. However, the significance of TLS loss in…
Tunneling light-emitting devices (LEDs) based on transition metal dichalcogenides (TMDs) and other 2D materials are a new platform for on-chip optoelectronic integration. Some of the physical processes underlying this LED architecture are…
Two occupied native defect bands are detected in pure HfO2, with one located in the middle of the band gap and the other slightly above the valence band maximum. The investigation on the electronic structures of hafnium aluminate thin films…
Defects in 2D materials are becoming prominent candidates for quantum emitters and scalable optoelectronic applications. However, several physical properties that characterize their behavior, such as charged defect ionization energies, are…
At sub-Kelvin temperatures, two-level systems (TLS) present in amorphous dielectrics source a permittivity noise, degrading the performance of a wide range of devices using superconductive resonators such as qubits or kinetic inductance…
First-principles density functional theory studies have been carried out for native defects and transition-metal (Ti and Ni) impurities in lithium alanate (LiAlH$_{4}$), a potential material for hydrogen storage. On the basis of our…
Layered molecular materials and especially MoS2 are already accepted as promising candidates for nanoelectronics. In contrast to the bulk material, the observed electron mobility in single-layer MoS2 is unexpectedly low. Here we reveal the…
Microscopic two-level system (TLS) defects at dielectric surfaces and interfaces are among the dominant sources of loss in superconducting quantum circuits, and their properties have been extensively probed using superconducting resonators…
Surface defects created and probed with scanning tunneling microscopes are a promising platform for atomic-scale electronics and quantum information technology applications. Using first-principles calculations we demonstrate how to engineer…
Gibbs free energy models are derived from the calculated electronic and phonon structure of two possible models of $\gamma$-alumina, a defective spinel phase and a hydrogenated spinel phase. The intrinsic vacancies and hydrogen in the two…
We have used a low-temperature scanning tunneling microscope (STM) to study the surface of heavily doped semiconductor InAs crystals. The crystals are cleaved in situ along the (110) plane. Apart from atomically flat areas, we also observe…
We study the hypothesis of high metallicity clumps being responsible for the abundance discrepancy found in planetary nebulae between the values obtained from recombination and collisionaly excited lines. We generate grids of…
Alkali metal $\beta$/$\beta^{\prime\prime}$ aluminas are among the fastest ionic conductors, yet little is understood about the role of defects in the ion transport mechanism. Here, we use density functional theory (DFT) to investigate the…
This paper presents the results of an extensive structural search of ternary solids containing lutetium, nitrogen and hydrogen. Based on thousands of thermodynamically stable structures, available online, the convex hull of the formation…
We report the first ensemble results from the FUSE survey of molecular hydrogen in lines of sight with A_V $\gtrsim$ 1 mag. We have developed techniques for fitting computed profiles to the low-J lines of H2, and thus determining column…
The non-LTE line formation for Al I and Si I was calculated with model atmospheres corresponding to F-G-K type stars of different metallicity. To account for inelastic collisions with H I, for the first time we applied the cross sections…
Recent experiments on hydrogenated amorphous silicon using infrared absorption spectroscopy have indicated the presence of mono- and divacancy in samples for concentration of up to 14\% hydrogen. Motivated by this observation, we study the…
A correction method for vertical transition levels (VTLs) involving defect states calculated with a supercell technique is formulated and its effectiveness is systematically verified with ten defects in prototypical materials: cubic-BN,…
We consider the decay of vortices trapped in the false vacuum of a theory of scalar electrodynamics in 2+1 dimensions. The potential is inspired by models with intermediate symmetry breaking to a metastable vacuum that completely breaks a…