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The quantum Hall effect is the seminal example of topological protection, as charge carriers are transmitted through one-dimensional edge channels where backscattering is prohibited. Graphene has made its marks as an exceptional platform to…

介观与纳米尺度物理 · 物理学 2021-07-14 Nicolas Moreau , Boris Brun , Sowmya Somanchi , Kenji Watanabe , Takashi Taniguchi , Christoph Stampfer , Benoit Hackens

We propose a new system where electron and hole states are electrostatically confined into a quantum ring in bilayer graphene. These structures can be created by tuning the gap of the graphene bilayer using nanostructured gates or by…

介观与纳米尺度物理 · 物理学 2015-05-14 M. Zarenia , J. M. Pereira , F. M. Peeters , G. A. Farias

This letter investigates the bias-dependent low frequency noise of single layer graphene field-effect transistors. Noise measurements have been conducted with electrolyte-gated graphene transistors covering a wide range of gate and drain…

介观与纳米尺度物理 · 物理学 2018-10-22 Nikolaos Mavredakis , Ramon Garcia Cortadella , Andrea Bonaccini Calia , Jose A. Garrido , David Jiménez

Far-infrared diagonal and Hall conductivities of multilayer epitaxial graphene on the C-face of SiC were measured using magneto-optical absorption and Faraday rotation in magnetic fields up to 7 T and temperatures between 5 and 300 K.…

强关联电子 · 物理学 2015-05-28 I. Crassee , J. Levallois , D. van der Marel , A. L. Walter , Th. Seyller , A. B. Kuzmenko

We report on the temperature dependent electron transport in graphene at different carrier densities $n$. Employing an electrolytic gate, we demonstrate that $n$ can be adjusted up to 4$\times10^{14}$cm$^{-2}$ for both electrons and holes.…

介观与纳米尺度物理 · 物理学 2010-12-14 Dmitri K. Efetov , Philip Kim

We study the processes of the electron and hole injection (double injection) into the i-region of graphene-layer and multiple graphene-layer p-i-n structures at the forward bias voltages. The hydrodynamic equations governing the electron…

介观与纳米尺度物理 · 物理学 2015-06-16 V. Ryzhii , I. Semenikhin , M. Ryzhii , D. Svintsov , V. Vyurkov , A. Satou , T. Otsuji

We study electron transport properties of a monoatomic graphite layer (graphene) with different types of disorder at half filling. We show that the transport properties of the system depend strongly on the symmetry of disorder. We find that…

介观与纳米尺度物理 · 物理学 2007-10-04 P. M. Ostrovsky , I. V. Gornyi , A. D. Mirlin

In this Letter, we derive an effective theory of graphene on a hexagonal Boron Nitride (h-BN) substrate. We show that the h-BN substrate generically opens a spectral gap in graphene despite the lattice mismatch. The origin of that gap is…

介观与纳米尺度物理 · 物理学 2012-11-12 M. Kindermann , Bruno Uchoa , D. L. Miller

Recent experiments have emphasized that our understanding of the interplay of electron correlations and randomness in solids is still incomplete. We address this important issue and demonstrate that particle-hole (ph) symmetry plays a…

强关联电子 · 物理学 2009-11-07 P. J. H. Denteneer , R. T. Scalettar , N. Trivedi

Equilibration of quantum Hall edges is studied in a high quality dual gated bilayer graphene device in both unipolar and bipolar regime when all the degeneracies of the zero energy Landau level are completely lifted. We find that in the…

介观与纳米尺度物理 · 物理学 2018-10-24 Chandan Kumar , Saurabh Kumar Srivastav , Anindya Das

Graphene in the quantum Hall regime exhibits a multi-component structure due to the electronic spin and chirality degrees of freedom. While the applied field breaks the spin symmetry explicitly, we show that the fate of the chirality SU(2)…

介观与纳米尺度物理 · 物理学 2007-05-23 M. O. Goerbig , R. Moessner , B. Doucot

We study the electronic properties of dual-gated electron-hole bilayers in which the two layers are separated by a perfectly opaque tunnel barrier. Combining an electrostatic and thermodynamic analysis with mean-field theory estimates of…

介观与纳米尺度物理 · 物理学 2020-09-09 Yongxin Zeng , A. H. MacDonald

Recent experiments have reported evidence of dominant electron-hole scattering in the electric conductivity of suspended bilayer graphene near charge neutrality. According to these experiments, plots of the electric conductivity as a…

介观与纳米尺度物理 · 物理学 2020-07-01 Mohammad Zarenia , Shaffique Adam , Giovanni Vignale

In view of the many quantum field theoretical descriptions of graphene in $2+1$ dimensions, we present another field theoretical feature of graphene, in the presence of defects. Particularly, we shall be interested in gapped graphene in the…

高能物理 - 理论 · 物理学 2015-06-30 V. K. Oikonomou

Due to its high charge carrier mobility, broadband light absorption, and ultrafast carrier dynamics, graphene is a promising material for the development of high-performance photodetectors. Graphene-based photodetectors have been…

介观与纳米尺度物理 · 物理学 2015-02-25 Biddut K. Sarker , Isaac Childres , Edward Cazalas , Igor Jovanovic , Yong P. Chen

We model the quantum Hall effect in heterostructures made of two gapped graphene stripes with different gaps, $\Delta_1$ and $\Delta_2$. We consider two main situations, $\Delta_1=0,\Delta_2\neq0$ and $\Delta_1=-\Delta_2$. They are…

介观与纳米尺度物理 · 物理学 2013-08-01 J. L. Lado , J. W. González , J. Fernández-Rossier

We present numerical simulations of the capacitive coupling between graphene nanoribbons of various widths and gate electrodes in different configurations. We compare the influence of lateral metallic or graphene side gate structures on the…

介观与纳米尺度物理 · 物理学 2014-03-11 R. Reiter , U. Derra , S. Birner , B. Terrés , F. Libisch , J. Burgdörfer , C. Stampfer

We study the effects of the interaction between electrons and holes on the conductance G of quasi-one-dimensional graphene systems. We first consider as a benchmark the limit in which all interactions are negligible, recovering the…

介观与纳米尺度物理 · 物理学 2013-05-29 M. Bazzanella , P. Faccioli , E. Lipparini

The electronic and optical response of Bernal stacked bilayer graphene with geometry modulation and gate voltage are studied. The broken symmetry in sublattices, one dimensional periodicity perpendicular to the domain wall and out-of-plane…

介观与纳米尺度物理 · 物理学 2018-06-13 Bor-Luen Huang , Chih-Piao Chuu , Ming-Fa Lin

The prospect of coupling a two-dimensional (2D) semiconductor heterostructure to a superconductor opens new research and technology opportunities, including fundamental problems in mesoscopic superconductivity, scalable superconducting…