We propose a new system where electron and hole states are electrostatically confined into a quantum ring in bilayer graphene. These structures can be created by tuning the gap of the graphene bilayer using nanostructured gates or by position-dependent doping. The energy levels have a magnetic field (B0) dependence that is strikingly distinct from that of usual semiconductor quantum rings. In particular, the eigenvalues are not invariant under a B0→−B0 transformation and, for a fixed total angular momentum index m, their field dependence is not parabolic, but displays two minima separated by a saddle point. The spectra also display several anti-crossings, which arise due to the overlap of gate-confined and magnetically-confined states.
@article{arxiv.0908.2831,
title = {Electrostatically confined Quantum Rings in bilayer Graphene},
author = {M. Zarenia and J. M. Pereira and F. M. Peeters and G. A. Farias},
journal= {arXiv preprint arXiv:0908.2831},
year = {2015}
}