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相关论文: Strong correlation induced charge localization in …

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We show that lightly doped holes will be self-trapped in an antiferromagnetic spin background at low-temperatures, resulting in a spontaneous translational symmetry breaking. The underlying Mott physics is responsible for such novel…

强关联电子 · 物理学 2007-05-23 Su-Peng Kou , Z. Y. Weng

A long-standing issue in the physics of strongly correlated electronic systems is whether the motion of a single hole in quantum antiferromagnets can be understood in terms of the quasiparticle picture. Very recently, investigations of this…

强关联电子 · 物理学 2012-05-25 Zheng Zhu , Hong-Chen Jiang , Yang Qi , Chu-Shun Tian , Zheng-Yu Weng

Cooper pairing instability in a Fermi liquid is well understood by the BCS theory, but pairing mechanism for doped Mott insulators still remains elusive. Previously it has been shown by density matrix renormalization group (DMRG) method…

强关联电子 · 物理学 2014-08-28 Zheng Zhu , Hong-Chen Jiang , Dong-Ning Sheng , Zheng-Yu Weng

Charge order appears to be an ubiquitous phenomenon in doped Mott insulators, which is currently under intense experimental and theoretical investigations particularly in the high $T_c$ cuprates. This phenomenon is conventionally understood…

强关联电子 · 物理学 2015-07-09 Zheng Zhu , Chushun Tian , Hong-Chen Jiang , Yang Qi , Zheng-Yu Weng , Jan Zaanen

The cuprate high-temperature superconductors are among the most intensively studied materials, yet essential questions regarding their principal phases and the transitions between them remain unanswered. Generally thought of as doped…

超导电性 · 物理学 2020-03-18 D. Pelc , P. Popčević , G. Yu , M. Požek , M. Greven , N. Barišić

Analysis of higher-order correlation functions has become a powerful tool for investigating interacting many-body systems in quantum simulators, such as quantum gas microscopes. Experimental measurements of mixed spin-charge correlation…

强关联电子 · 物理学 2021-09-08 Yao Wang , Annabelle Bohrdt , Joannis Koepsell , Eugene Demler , Fabian Grusdt

This paper presents numerical studies of the single hole tt't''J model that address the interplay between the kinetic energy of itinerant electrons and the exchange energy of local moments as of interest to doped Mott insulators. Due to…

强关联电子 · 物理学 2009-11-11 Tiago C. Ribeiro

We study possible charge instabilities in doped Mott insulators by employing the two-dimensional t-J model with a positive value of the next nearest-neighbor hopping integral t' on a square lattice, which is applicable to electron-doped…

超导电性 · 物理学 2014-12-04 Matias Bejas , Andres Greco , Hiroyuki Yamase

Trial wavefunctions, constructed explicitly from the unique 2-dimensional Mott insulating state with antiferromagnetic order, are proposed to describe the low-energy states of a Mott insulator slightly doped with holes or electrons. With…

强关联电子 · 物理学 2009-11-07 T. K. Lee , Chang-Ming Ho , Naoto Nagaosa , Wei-Cheng Lee

Identification of the electronic state that appears upon doping a Mott insulator is important to understand the physics of cuprate high-temperature superconductors. Recent scanning tunneling microscopy of cuprates provides evidence that a…

超导电性 · 物理学 2019-01-31 R. Nourafkan , M. Côté , A. - M. S. Tremblay

The problem of a mobile hole doped into an antiferromagnet Mott insulator is believed to underly the rich physics of several paradigmatic strongly correlated electron systems, ranging from heavy fermions to high-Tc superconductivity.…

强关联电子 · 物理学 2025-12-02 Piotr Wrzosek , Krzysztof Wohlfeld , Eugene A. Demler , Annabelle Bohrdt , Fabian Grusdt

We have carried out density-matrix-renormalization group (DMRG) calculations for the problem of one doped hole in a two-leg $t-J$ ladder. Recent studies have concluded that exotic "Mott" physics --- arising from the projection onto the…

强关联电子 · 物理学 2015-08-05 S. R. White , D. J. Scalapino , S. A. Kivelson

A doped Mott insulator exhibits peculiar properties associated with its singular sign structure. As a case study, we investigate the ground state and excitations of finite-size Heisenberg loops doped with one hole by exact diagonalization.…

强关联电子 · 物理学 2018-10-22 Wayne Zheng , Zheng-Yu Weng

We determine the motion of a charge (hole or electron) added to the Mott insulating, antiferromagnetic (AF) ground-state of quasi-2D iridates such as Ba 2 IrO 4 or Sr 2 IrO 4 . We show that correlation effects, calculated within the…

High temperature superconductivity was achieved by introducing holes in a parent compound consisting of copper oxide layers separated by spacer layers. It is possible to dope some of the parent compounds with electrons, and their physical…

强关联电子 · 物理学 2015-05-19 Cedric Weber , Kristjan Haule , Gabriel Kotliar

We investigate the evolution of the Mott insulators in the triangular lattice Hubbard Model, as a function of hole doping $\delta$ in both the strong and intermediate coupling limits. Using the advanced density matrix renormalization group…

强关联电子 · 物理学 2022-06-17 Zheng Zhu , D. N. Sheng , Ashvin Vishwanath

We investigate the nature of doped Mott insulators using exact diagonalization and density matrix renormalization group methods. Persistent spin currents are revealed in the ground state, which are concomitant with a nonzero total momentum…

强关联电子 · 物理学 2018-10-22 Wayne Zheng , Zheng Zhu , D. N. Sheng , Zheng-Yu Weng

We demonstrate that a Mott insulator lightly doped with holes is still an insulator at low temperature even without disorder. Hole localization obtains because the chemical potential lies in a pseudogap which has a vanishing density of…

强关联电子 · 物理学 2009-11-11 Ting-Pong Choy , Philip Phillips

A central question in the high temperature cuprate superconductors is the fate of the parent Mott insulator upon charge doping. Here we use scanning tunneling microscopy to investigate the local electronic structure of lightly doped cuprate…

超导电性 · 物理学 2017-02-21 Peng Cai , Wei Ruan , Yingying Peng , Cun Ye , Xintong Li , Zhenqi Hao , Xingjiang Zhou , Dung-Hai Lee , Yayu Wang

We study a two-dimensional single band Hubbard Hamiltonian with antisymmetric spin-orbit coupling. We argue that this is the minimal model to understand the electronic properties of locally non-centrosymmetric transition-metal (TM) oxides…

强关联电子 · 物理学 2021-04-30 Mehdi Biderang , Alireza Akbari , Jesko Sirker
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