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A detailed exact-diagonalization study is made for the doping dependence of the single-particle spectral function $A({\bf k},\omega)$ and momentum distribution function $n({\bf k})$ of the two-dimensional $t$$-$$J$ model as a representative…

凝聚态物理 · 物理学 2007-05-23 Y. Ohta , R. Eder

Mott insulators form because of strong electron repulsions, being at the heart of strongly correlated electron physics. Conventionally these are understood as classical "traffic jams" of electrons described by a short-ranged entangled…

高能物理 - 理论 · 物理学 2018-08-03 Tomas Andrade , Alexander Krikun , Koenraad Schalm , Jan Zaanen

We show here that many of the normal state properties of the cuprates can result from the new charge 2e bosonic field which we have recently (Phys. Rev. Lett. {\bf 99}, 46404 (2007) and Phys. Rev. B 77, 014512 (2008)) shown to exist in the…

强关联电子 · 物理学 2009-11-13 Ting-Pong Choy , Robert G. Leigh , Philip Phillips

How superconductivity emerges in the vicinity of an antiferromagnetic insulating state is a long-standing issue of strong correlation physics. We study the transition from an antiferromagnetic insulator to a superconductor by hole-doping…

强关联电子 · 物理学 2022-08-16 Tianxing Ma , Da Wang , Congjun Wu

The interplay of spin and charge degrees of freedom, introduced by doping mobile holes into a Mott insulator with strong anti-ferromagnetic (AFM) correlations, is at the heart of strongly correlated matter such as high-Tc cuprate…

强关联电子 · 物理学 2019-06-26 Fabian Grusdt , Annabelle Bohrdt , Eugene Demler

We study the single hole tt't''J-model numerically to address the momentum space anisotropy found in doped Mott insulators. A simple two band picture to understand how the doped hole is screened by the spin background in states of different…

强关联电子 · 物理学 2007-05-23 Tiago C. Ribeiro

Based on an effective model of a doped antiferromagnetic Mott insulator, we show that a doped hole will induce a dipole-like spin configuration in a spin ordered phase at low doping. The kinetic energy of doped holes is severely frustrated…

强关联电子 · 物理学 2007-05-23 Su-Peng Kou , Zheng-Yu Weng

Though most fermionic Mott insulators order at low temperatures, ordering is ancillary to their insulating behaviour. Our emphasis here is on disentangling ordering from the intrinsic strongly correlated physics of a doped half-filled band.…

强关联电子 · 物理学 2009-11-10 Tudor D. Stanescu , Philip Phillips

It is widely recognised that the effect of doping into a Mott insulator is complicated and unpredictable, as can be seen by examining the Hall coefficient in high $T_{\rm c}$ cuprates. The doping effect, including the electron-hole doping…

A central issue of Mott physics, with symmetries being fully retained in the spin background, concerns the charge excitation. In a two-leg spin ladder with spin gap, an injected hole can exhibit either a Bloch wave or a density wave by…

强关联电子 · 物理学 2018-07-25 Zheng Zhu , D. N. Sheng , Zheng-Yu Weng

Some well-established examples of itinerant-electron ferromagnetism in one dimension occur in a Mott-insulating phase. We examine the consequences of doping a ferromagnetic insulator and cou- pling magnons to gapless charge fluctuations.…

强关联电子 · 物理学 2015-04-28 Hudson Pimenta , Luiz N. Oliveira , Rodrigo G. Pereira

We study the effect of carrier doping to the Mott insulator on the Penrose tiling, aiming at clarifying the interplay between quasiperiodicity and strong electron correlations. We numerically solve the Hubbard model on the Penrose-tiling…

强关联电子 · 物理学 2022-10-06 Shiro Sakai , Nayuta Takemori

While the pseudogap dominates the phase diagram of hole-doped cuprates, connecting the antiferromagnetic parent insulator at low doping to the strange metal at higher doping, its origin and relation to superconductivity remains unknown. In…

超导电性 · 物理学 2022-11-28 Jake Ayres , Mikhail I. Katsnelson , Nigel E. Hussey

In this paper we explore the incommensurate spatial modulation of spin-spin correlations as the intrinsic property of the doped Mott insulator, described by the $t-J$ model. We show that such an incommensurability is a direct manifestation…

强关联电子 · 物理学 2009-10-31 Z. Y. Weng , D. N. Sheng , C. S. Ting

Many emergent phenomena appear in doped Mott insulators near the insulator-to-metal transition. In high-temperature cuprate superconductors, superconductivity arises when antiferromagnetic (AFM) order is gradually suppressed by carrier…

The charge dynamics in weakly hole doped high temperature superconductors is studied in terms of the accurate numerical solution to a model of a single hole interacting with a quantum lattice in an antiferromagnetic background, and accurate…

Recent experimental discoveries have brought a diverse set of broken symmetry states to the center stage of research on cuprate superconductors. Here, we focus on a thematic understanding of the diverse phenomenology by exploring a…

强关联电子 · 物理学 2014-12-02 Mark H. Fischer , Si Wu , Michael Lawler , Arun Paramekanti , Eun-Ah Kim

Recent experiments revealed a striking asymmetry in the phase diagram of the high temperature cuprate superconductors. The correlation effect seems strong in the hole-doped systems and weak in the electron-doped systems. On the other hand,…

超导电性 · 物理学 2017-10-16 Ryota Mizuno , Masayuki Ochi , Kazuhiko Kuroki

In the framework of dynamical mean field theory (DMFT) we analyze Hall effect in doped Mott insulator as a parent cuprate superconductor. We consider the partial filling (hole doping) of the lower Hubbard band and calculate the dependence…

强关联电子 · 物理学 2022-05-20 E. Z. Kuchinskii , N. A. Kuleeva , D. I. Khomskii , M. V. Sadovskii

Since the discovery of the cuprate high-temperature superconductivity in 1986, a universal phase diagram has been constructed experimentally and numerous theoretical models have been proposed. However, there remains no consensus on the…

超导电性 · 物理学 2017-08-11 Jun Chang , Jize Zhao