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相关论文: Strong correlation induced charge localization in …

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The motion of a single hole in a Mott antiferromagnet is investigated based on the t-J model. An exact expression of the energy spectrum is obtained, in which the irreparable phase string effect [Phys. Rev. Lett. 77, 5102 (1996)] is…

强关联电子 · 物理学 2009-10-31 Z. Y. Weng , V. N. Muthukumar , D. N. Sheng , C. S. Ting

The mechanism underlying charge transport in strongly correlated quantum systems, such as doped antiferromagnetic Mott insulators, remains poorly understood. Here we study the expansion dynamics of an initially localized hole inside a…

量子气体 · 物理学 2022-07-13 Lauritz Hahn , Annabelle Bohrdt , Fabian Grusdt

We show that the strong coupling physics inherent to the insulating Mott state in 2D leads to a jump in the chemical potential upon doping and the emergence of a pseudogap in the single particle spectrum below a characteristic temperature.…

强关联电子 · 物理学 2009-11-07 Tudor D. Stanescu , Philip Phillips

The kinetic features of holes (electrons) in the Hubbard model are studied using a variational Monte Carlo method. In doped Mott insulators (U>U_co), holes are classified, in the sense of conduction, into two categories: (i) The holes…

强关联电子 · 物理学 2012-11-28 H. Yokoyama , S. Tamura , K. Kobayashi , M. Ogata

There is growing evidence that the hole-doped single-band Hubbard and $t$-$J$ models do not have a superconducting ground state reflective of the high-temperature cuprate superconductors but instead have striped spin- and charge-ordered…

The high-temperature superconductivity in copper oxides emerges when carriers are doped into the parent Mott insulator. This well-established fact has, however, eluded a microscopic explanation. Here we show that the missing link is the…

强关联电子 · 物理学 2018-11-14 Shiro Sakai , Marcello Civelli , Masatoshi Imada

We study electronic structure of hole- and electron-doped Mott insulators in the two-dimensional Hubbard model to reach a unified picture for the normal state of cuprate high-Tc superconductors. By using a cluster extension of the dynamical…

强关联电子 · 物理学 2010-10-20 Shiro Sakai , Yukitoshi Motome , Masatoshi Imada

Near a Mott transition, strong electron correlations may enhance Cooper pairing. This is demonstrated in the Dynamical Mean Field Theory solution of a twofold-orbital degenerate Hubbard model with inverted Hund's rules on-site exchange,…

强关联电子 · 物理学 2007-08-07 M. Capone , M. Fabrizio , C. Castellani , E. Tosatti

The phenomenon of Mott insulation involves the localization of itinerant electrons due to strong local repulsion. Upon doping, a pseudogap (PG) phase emerges - marked by selective gapping of the Fermi surface without conventional symmetry…

Injecting a single hole into a one-dimensional Heisenberg spin chain is probably the simplest case of doping a Mott insulator. The motion of such a single hole will generally induce a many-body phase shift, which can be identified by an…

强关联电子 · 物理学 2016-01-06 Zheng Zhu , Qing-Rui Wang , D. N. Sheng , Zheng-Yu Weng

Momentum resolved inelastic resonant x-ray scattering is used to map the evolution of charge excitations over a large range of energies, momenta and doping levels in the electron doped Mott insulator class Nd$_{2-x}$Ce$_x$CuO$_4$. As the…

强关联电子 · 物理学 2008-12-11 Y. W. Li , D. Qian , L. Wray , D. Hsieh , Y. Kaga , T. Sasagawa , H. Takagi , R. S. Markiewicz , A. Bansil , H. Eisaki , S. Uchida , M. Z. Hasan

An influence of the localization of itinerant electrons induced by correlated hopping on the electronic charge and heat transport is discussed for the lightly doped Mott insulator phase of the Falicov-Kimball model. The case of strongly…

强关联电子 · 物理学 2020-03-05 D. A. Dobushovskyi , A. M. Shvaika

The physics of doped Mott insulators remains controversial after decades of active research, hindered by the interplay among possible competing orders and fluctuations. It is thus highly desired to distinguish the intrinsic characters of…

In strongly correlated quantum materials, the behavior of charge carriers is dominated by strong electron-electron interactions. These can lead to insulating states with spin order, and upon doping to competing ordered states including…

强关联电子 · 物理学 2023-05-03 Fabian Grusdt , Eugene Demler , Annabelle Bohrdt

We report on a new electromagnetic phenomenon that emerges in Mott insulators, i.e., materials that do not conduct electricity because of strong electronic Coulomb repulsion. The phenomenon manifests as antiferromagnetic ordering due to…

强关联电子 · 物理学 2015-05-13 K. A. Al-Hassanieh , C. D. Batista , G. Ortiz , L. N. Bulaevskii

We study a ground-state ansatz for the single-hole doped $t$-$J$ model in two dimensions via a variational Monte Carlo (VMC) method. Such a single-hole wave function possesses finite angular momenta generated by hidden spin currents, which…

强关联电子 · 物理学 2019-07-04 Shuai Chen , Qing-Rui Wang , Yang Qi , D. N. Sheng , Zheng-Yu Weng

Photo-doping of Mott insulators or correlated metals can create an unusual metallic state which simultaneously hosts hole-like and electron-like particles. We study the dynamics of this state up to long times, as it passes its kinetic…

强关联电子 · 物理学 2021-05-26 Nagamalleswararao Dasari , Jiajun Li , Philipp Werner , Martin Eckstein

Tailoring transport properties of strongly correlated electron systems in a controlled fashion counts among the dreams of materials scientists. In copper oxides, varying the carrier concentration is a tool to obtain high-temperature…

We report the influence of the field effect on the dc resistance and Hall coefficient in the strain-induced Mott insulating state of an organic superconductor $\kappa$-(BEDT-TTF)$_{2}$Cu[N(CN)$_{2}$]Br. Conductivity obeys the formula for…

Understanding the similarities and differences between adding or removing electrons from a charge-transfer insulator may provide insights about the origin of the electron-hole asymmetry found in cuprates. Here we study with cellular…

强关联电子 · 物理学 2025-01-08 G. Sordi , G. L. Reaney , N. Kowalski , P. Sémon , A. -M. S. Tremblay