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相关论文: Doping induced metal-insulator phase transition in…

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We present a method for calculating the spectrum of periodic solids within reduced density matrix functional theory. This method is validated by a detailed comparison of the angular momentum projected spectral density with that of well…

强关联电子 · 物理学 2015-06-05 S. Sharma , J. K. Dewhurst , S. Shallcross , E. K. U. Gross

The evolution of the electronic structures of strongly correlated insulators with doping has long been a central fundamental question in condensed matter physics; it is also of great practical relevance for applications. We have studied the…

$RE$NiO$_3$ is a negative charge transfer energy system and exhibits a temperature-driven metal-insulator transition (MIT), which is also accompanied by a bond disproportionation (BD) transition. In order to explore how hole doping affects…

The microscopic mechanism of the hydrogen-induced metal-insulator transition in SmNiO$_3$ is clarified by means of density-functional theory with the Hubbard U correction. While 100% of hydrogen doping per Ni atom has been supposed to be…

强关联电子 · 物理学 2022-10-17 Kunihiko Yamauchi , Ikutaro Hamada

Metal-insulator transitions in two dimensional materials represent a great opportunity for fast, low energy and ultra-dense switching devices. Due to the small energy difference between its semimetallic and semiconducting crystal phases,…

材料科学 · 物理学 2019-06-26 Abhinav Kumar , Alejandro H. Strachan , Nicolas Onofrio

Using a combination of {\it ab initio} bandstructure methods and dynamical mean-field theory we study the single-particle spectrum of the prototypical charge-transfer insulator NiO. Good agreement with photoemission and…

强关联电子 · 物理学 2015-06-25 J. Kunes , V. I. Anisimov , A. V. Lukoyanov , D. Vollhardt

Metal-insulator transition features as a transformation, from a highly charge conductive state to another state where charge conductivity is greatly suppressed when decreasing the temperature. Here we demonstrate two consecutive transitions…

强关联电子 · 物理学 2017-03-08 M. S. Saleem , C. Song , J. J. Peng , B. Cui , F. Li , Y. D. Gu , F. Pan

First principles calculations through density functional theory (DFT)+$U$ method were performed to assess the effect of Li interstitial doping on the optoelectronic properties of NiO and of cubic, hexagonal, and monoclinic WO$_3$. The…

Modulation of the charge carrier density in a Mott material by remote doping from a highly doped conventional band insulator is proposed to test theoretical predictions of band filling control of the Mott metal-insulator transition without…

材料科学 · 物理学 2011-11-11 Junwoo Son , Bharat Jalan , Adam P. Kajdos , Leon Balents , S. James Allen , Susanne Stemmer

One of the major puzzles in condensed matter physics has been the observation of a Mott-insulating state away from half-filling. The filling-controlled Mott insulator-metal transition, induced via charge-carrier doping, has been extensively…

强关联电子 · 物理学 2021-07-13 S. Hameed , J. Joe , D. M. Gautreau , J. W. Freeland , T. Birol , M. Greven

The insulator to metal transition in LaTiO_3 induced by La substitution via Sr is studied within multi-band exact diagonalization dynamical mean field theory at finite temperatures. It is shown that weak hole doping triggers a large…

强关联电子 · 物理学 2009-11-13 A. Liebsch

Photo-doped states in strongly correlated charge transfer insulators are characterized by $d$-$d$ and $d$-$p$ interactions and the resulting intertwined dynamics of charge excitations and local multiplets. Here we use femtosecond x-ray…

Ni-doped MoS$_2$ is a layered material with useful tribological, optoelectronic, and catalytic properties. Experiment and theory on doped MoS$_2$ has focused mostly on monolayers or finite particles: theoretical studies of bulk Ni-doped…

材料科学 · 物理学 2021-07-01 Enrique Guerrero , Rijan Karkee , David A. Strubbe

By means of first principles schemes based on magnetically constrained density functional theory and on the band unfolding technique we study the effect of doping on the conducting behaviour of the Lifshitz magnetic insulator NaOsO3.…

The doping induced insulator-metal transition in $La_{1-x}Sr_{x}TiO_{3}$ is studied using the ab-initio LDA+DMFT method. Combining the LDA bandstructure for the actual, distorted structure found recently with multi-orbital DMFT to treat…

强关联电子 · 物理学 2016-08-31 L. Craco , M. S. Laad , S. Leoni , E. Müller-Hartmann

We investigate the electronic structure of nickelate superconductor NdNiO2 upon hole doping, by means of density-functional theory and dynamical mean-field theory. We demonstrate the strong intrinsic hybridization between strongly…

强关联电子 · 物理学 2021-01-13 Zhao Liu , Chenchao Xu , Chao Cao , W. Zhu , Z. F. Wang , Jinlong Yang

We present results of combined density functional theory plus dynamical mean-field theory (DFT+DMFT) calculations, which show that the Mott insulator LaTiO3 undergoes an insulator-to-metal transition under compressive epitaxial strain of…

强关联电子 · 物理学 2014-04-17 Krzysztof Dymkowski , Claude Ederer

We studied an electron-induced metal-insulator transition in a two-terminal device based on oxide NdNiO3. In our device, the NdNiO3 is electrostatically doped by the voltage applied between the terminals, resulting in an asymmetric…

介观与纳米尺度物理 · 物理学 2012-10-11 W. L. Lim , E. J. Moon , J. W. Freeland , D. J. Meyers , M. Kareev , J. Chakhalian , S. Urazhdin

We perform a thorough study of an extended Hubbard model featuring local and nearest-neighbor Coulomb repulsion. Using dynamical mean-field theory we investigated the zero temperature phase-diagram of this model as a function of the…

强关联电子 · 物理学 2017-03-15 K. J. Kapcia , S. Robaszkiewicz , M. Capone , A. Amaricci

Rutile ($R$) phase VO$_2$ is a quintessential example of a strongly correlated bad-metal, which undergoes a metal-insulator transition (MIT) concomitant with a structural transition to a V-V dimerized monoclinic phase below T$_{MIT} \sim…

材料科学 · 物理学 2020-04-29 P. Ganesh , Frank Lechermann , Ilkka Kylanpaa , Jaron Krogel , Paul R. C. Kent , Olle Heinonen
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