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We present a novel tin based flexible, gel polymer negative electrode for use in sodium-ion devices. The electrodes have been prepared by trapping tin micro-particles in a porous electrolyte membrane formed by immersion precipitation…

材料科学 · 物理学 2022-01-25 Nitish Yadav , S. A. Hashmi

Memristors that mimic brain functions are crucial for energy-efficient neuromorphic devices. Ion channels that emulate biological synapses are still in the early stages of development, especially the tunability of memory states. Here, we…

材料科学 · 物理学 2024-12-09 Dhal Biswabhusan , Puzari Animesh , Li-Hsien Yeh , Kalon Gopinadhan

Electrical breakdown in a dielectric capacitor occurs when the electric field strength across the dielectric material exceeds its breakdown strength. A conductive channel through the dielectric emerges, resulting in a sudden surge of…

材料科学 · 物理学 2024-12-31 Vitaly V. Chaban , Nadezhda A. Andreeva

We demonstrate that memristive devices can be fabricated by tip-induced oxidation of thin metallic films using atomic force microscope. Electrical measurements of such prepared Ti/TiOx/Ti test structures confirmed their memristive behavior…

介观与纳米尺度物理 · 物理学 2013-06-25 I. Batko , M. Batkova

The width of the electrodes is not included in the current phenomenological models of memristance, but is included in the memory-conservation (mem-con) theory of memristance. An experimental study of the effect of changing the top electrode…

材料科学 · 物理学 2012-07-31 Ella Gale , Ben de Lacy Costello , Andrew Adamatzky

While two-terminal HfOX (x<2) memristor devices have been studied for ion transport and current evolution, there have been limited reports on the effect of the long-range thermal environment on their performance. In this work,…

This study explores the impact of organic cations in bismuth iodide complexes on their memristive behavior in metal-insulator-metal (MIM) type thin-layer devices. The presence of electron-donating and electron withdrawing functional groups…

Electrical characteristics of a Co/TiO_x/Co resistive memory device, fabricated by two different methods are reported. In addition to crystalline TiO_2 layers fabricated via conventional atomic layer deposition (ALD), an alternative method…

The morphology and dimension of the conductive filament formed in a memristive device are strongly influenced by the thickness of its switching medium layer. Aggressive scaling of this active layer thickness is critical towards reducing the…

Optical memristors represent a monumental leap in the fusion of photonics and electronics, heralding a new era of applications from neuromorphic computing to artificial intelligence. However, current technologies are hindered by complex…

We report a bistable organic memory made of a single organic layer embedded between two electrodes, we compare to the organic/metal nanoparticle/organic tri-layers device [L.P. Ma, J. Liu, and Y. Yang, Appl. Phys. Lett. 80, 2997 (2002)]. We…

材料科学 · 物理学 2015-06-24 Dominique Vuillaume , Kamal Lmimouni , Denis Tondelier , Christophe Fery , Gunther Haas

A memristor is a two-terminal nanodevice that its properties attract a wide community of researchers from various domains such as physics, chemistry, electronics, computer and neuroscience.The simple structure for manufacturing, small…

新兴技术 · 计算机科学 2017-03-02 Mahyar Shahsavari , Pierre Boulet

Memristors have been at the forefront of nanoelectronics research for the last decade, offering a valuable component to reconfigurable computing. Their attributes have been studied extensively along with applications that leverage their…

This study investigates 7-methylquinolinium halobismuthates (I, Br, and Cl) in two aspects: (1) their structural and semiconducting properties influenced by anionic composition, and (2) their memristive and plasticity characteristics for…

Two-dimensional (2D) materials like transition metal dichalcogenides (TMD) have proved to be serious candidates to replace silicon in several technologies with enhanced performances. In this respect, the two remaining challenges are the…

The development prospects of memristive elements for non-volatile memory with use of the metal-dielectric-metal sandwich structures with a thin oxide layer are due to the possibility of reliable forming the sustained functional states with…

材料科学 · 物理学 2021-12-15 A. S. Vokhmintsev , I. A. Petrenyov , R. V. Kamalov , I. A. Weinstein

Memristive devices have drawn considerable research attention due to their potential applications in non-volatile memory and neuromorphic computing. The combination of resistive switching devices with light-responsive materials is…

应用物理 · 物理学 2020-09-22 Kamalakannan Ranganathan , Mor Feingenbaum , Ariel Ismach

Advanced operando transmission electron microscopy (TEM) techniques enable the observation of nanoscale phenomena in electrical devices during operation. They can be used to study the switching mechanisms in two-dimensional (2D)…

Comprehensive understanding of the world's most energy efficient powerful computer, the human brain, is an elusive scientific issue. Still, already gained knowledge indicates memristors can be used as a building block to model the brain. At…

应用物理 · 物理学 2017-06-20 Mohamed T. Ghoneim , Muhammad M. Hussain

Appropriate candidates of the metallic sheet used for the electrodes of diamond semiconductor are investigated using computational approaches based on density functional theory (DFT). For twenty kinds of metallic elements $x$, we modeled a…

材料科学 · 物理学 2017-09-12 Tom Ichibha , Kenta Hongo , Isaac Motochi , Nicholas W. Makau , George O. Amolo , Ryo Maezono