相关论文: Unipolar transport in bilayer graphene controlled …

We demonstrate a tunneling and rectification behavior in bilayer graphene. A stepped dielectric top gate creates a spatially modulated electric field, which opens the band gap in the graphene and produces an insulating region at the p-n…

An Atomic Force Microscope is used to locally manipulate a single layer graphene sheet. Transport measurements in this region as well as in the unmanipulated part reveal different charge carrier densities while mobilities stay in the order…

We perform transport measurements in high quality bilayer graphene pnp junctions with suspended top gates. At a magnetic field B=0, we demonstrate band gap opening by an applied perpendicular electric field, with an On/Off ratio up to…

The concept of a novel graphene P-I-N junction switching device with a nanoribbon is proposed, and its basic operation is demonstrated in an experiment. The concept aims to optimize the operation scheme for graphene transistors toward a…

Double-gated graphene devices provide an important platform for understanding electrical and optical properties of graphene. Here we present transport measurements of single layer, bilayer and trilayer graphene devices with suspended top…

Gapless spectrum of graphene allows easy spatial separation of electrons and holes with an external in-plane electric field. Guided collective plasmon modes can propagate along the separation line, whose amplitude decays with the distance…

Ballistic semiconductor structures have allowed the realization of optics-like phenomena in electronics, including magnetic focusing and lensing. An extension that appears unique to graphene is to use both n and p carrier types to create…

We study ballistic transport in bilayer graphene junctions and show how electrostatic gating, interlayer bias, and homogeneous strain provide complementary control over electron transmission. In the absence of strain, transport is governed…

We show simultaneous p and n type carrier injection in bilayer graphene channel by varying the longitudinal bias across the channel and the top gate voltage. The top gate is applied electrochemically using solid polymer electrolyte and the…

Electric transport of double gated bilayer graphene devices is studied as a function of charge density and bandgap. A top gate electrode can be used to control locally the Fermi level to create a pn junction between the double-gated and…

Graphene's linear dispersion relation and the attendant implications for bipolar electronics applications have motivated a range of experimental efforts aimed at producing p-n junctions in graphene. Here we report electrical transport…

We present transport measurements on a bilayer graphene sheet with homogeneous back gate and split top gate. The electronic transport data indicates the capability to direct electron flow through graphene nanostructures purely defined by…

We investigated a suspended bilayer graphene where the bottom (top) layer is doped by boron (nitrogen) substitutional atoms by using Density Functional Theory (DFT) calculations. We found that at high dopant concentration (one B-N pair…

We employ a dual-gated geometry to control the band gap \Delta in bilayer graphene and study the temperature dependence of the resistance at the charge neutrality point, RNP(T), from 220 to 1.5 K. Above 5 K, RNP(T) is dominated by two…

We fabricate twisted double bilayer graphene devices with zero twist angle and a set of local top and bottom gates aligned perpendicularly to each other. A 1D PN junction can be electrostatically defined when the gate voltages applied to…

Electrostatic confinement of charge carriers in bilayer graphene provides a unique platform for carbon-based spin, charge or exchange qubits. By exploiting the possibility to induce a band gap with electrostatic gating, we form a versatile…

Graphane is a semiconductor with an energy gap, obtained from hydrogenation of the two-dimensional grapheme sheet. Together with the two-dimensional geometry, unique transport features of graphene, and possibility of doping graphane, p and…

Graphene is a promising candidate for optoelectronic applications. In this report, a double gated bilayer graphene FET has been made using a combination of electrostatic and electrolytic gating in order to form an abrupt p-n junction. The…

We propose the theory of transport in a gate-tunable graphene p-n junction, in which the gradient of the carrier density is controlled by the gate voltage. Depending on this gradient and on the density of charged impurities, the junction…

We show that the strong coupling of pseudospin orientation and charge carrier motion in bilayer graphene has a drastic effect on transport properties of ballistic p-n-p junctions. Electronic states with zero momentum parallel to the barrier…