Graphene's linear dispersion relation and the attendant implications for bipolar electronics applications have motivated a range of experimental efforts aimed at producing p-n junctions in graphene. Here we report electrical transport measurements of graphene p-n junctions formed via simple modifications to a PbZr0.2Ti0.8O3 substrate, combined with a self-assembled layer of ambient environmental dopants. We show that the substrate configuration controls the local doping region, and that the p-n junction behavior can be controlled with a single gate. Finally, we show that the ferroelectric substrate induces a hysteresis in the environmental doping which can be utilized to activate and deactivate the doping, yielding an `on-demand' p-n junction in graphene controlled by a single, universal backgate.
@article{arxiv.1506.07138,
title = {Single Gate P-N Junctions in Graphene-Ferroelectric Devices},
author = {J. Henry Hinnefeld and Ruijuan Xu and Steven Rogers and Shishir Pandya and Moonsub Shim and Lane W. Martin and Nadya Mason},
journal= {arXiv preprint arXiv:1506.07138},
year = {2016}
}