We demonstrated doping in 2D monolayer graphene via local electrical stressing. The doping, confirmed by the resistance-voltage transfer characteristics of the graphene system, is observed to continuously tunable from N-type to P-type as the electrical stressing level (voltage) increases. Two major physical mechanisms are proposed to interpret the observed phenomena: modifications of surface chemistry for N-type doping (at low-level stressing) and thermally-activated charge transfer from graphene to SiO2 substrate for P-type doping (at high-level stressing). The formation of P-N junction on 2D graphene monolayer is demonstrated with complementary doping based on locally applied electrical stressing.
@article{arxiv.1103.4568,
title = {Local Electrical Stress-Induced Doping and Formation of 2D Monolayer Graphene P-N Junction},
author = {Tianhua Yu and Chen-Wei Liang and Changdong Kim and Bin Yu},
journal= {arXiv preprint arXiv:1103.4568},
year = {2015}
}