Gate-activated photoresponse in a graphene p-n junction

M. C. Lemme; F. H. L. Koppens; A. L. Falk; M. S. Rudner; H. Park; L. S. Levitov; C. M. Marcus

doi:10.1021/nl2019068

Gate-activated photoresponse in a graphene p-n junction

Mesoscale and Nanoscale Physics 2011-12-30 v2 Instrumentation and Detectors Optics

Authors: M. C. Lemme , F. H. L. Koppens , A. L. Falk , M. S. Rudner , H. Park , L. S. Levitov , C. M. Marcus

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Abstract

We study photodetection in graphene near a local electrostatic gate, which enables active control of the potential landscape and carrier polarity. We find that a strong photoresponse only appears when and where a p-n junction is formed, allowing on-off control of photodetection. Photocurrents generated near p-n junctions do not require biasing and can be realized using submicron gates. Locally modulated photoresponse enables a new range of applications for graphene-based photodetectors including, for example, pixilated infrared imaging with control of response on subwavelength dimensions.

Keywords

graphene p-n junction photoresponse photodetection electrostatic gate infrared imaging

Cite

@article{arxiv.1012.4745,
  title  = {Gate-activated photoresponse in a graphene p-n junction},
  author = {M. C. Lemme and F. H. L. Koppens and A. L. Falk and M. S. Rudner and H. Park and L. S. Levitov and C. M. Marcus},
  journal= {arXiv preprint arXiv:1012.4745},
  year   = {2011}
}

Gate-activated photoresponse in a graphene p-n junction

Abstract

Keywords

Cite

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