English

High-frequency rectification in graphene lateral p-n junctions

Mesoscale and Nanoscale Physics 2018-02-14 v1

Abstract

We observe a dc electric current in response to terahertz radiation in lateral inter-digitated double-comb graphene p-n junctions. The junctions were fabricated by selective ultraviolet irradiation inducing p-type doping in intrinsic n-type epitaxial monolayer graphene. The photocurrent exhibits a strong polarization dependence and is explained by electric rectification in p-n junctions.

Keywords

Cite

@article{arxiv.1711.03803,
  title  = {High-frequency rectification in graphene lateral p-n junctions},
  author = {Yu. B. Vasilyev and G. Yu. Vasileva and S. Novikov and S. A. Tarasenko and S. N. Danilov and S. D. Ganichev},
  journal= {arXiv preprint arXiv:1711.03803},
  year   = {2018}
}
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