相关论文: The effect of spin drift on spin accumulation volt…

We conduct an experimental investigation of temperature dependence of spin diffusion length in highly-doped n-type silicon by using a non-local 3-terminal method. Whereas an effect of spin drift is not ignorable to bias- and…

A quantitative estimation of spin drift velocity in highly doped n-type silicon (Si) at 8 K is presented in this letter. A local two-terminal Hanle measurement enables the detection of a modulation of spin signals from the Si as a function…

Spin accumulation voltages in a non-degenerate Si spin valve are discussed quantitatively as a function of electric bias current using systematic experiments and model calculations. As an open question in semiconductor spintronics, the…

A gate voltage application in a Si-based spin metal-oxide-semiconductor field-effect transistor (spin MOSFET) modulates spin accumulation voltages, where both electrical conductivity and drift velocity are modified while keeping constant…

A large spin-accumulation voltage of more than 1.5 mV at 1 mA, i.e., a magnetoresistance of 1.5 {\Omega}, was measured by means of the local three-terminal magnetoresistance in nondegenerate Si-based lateral spin valves (LSVs) at room…

The underlying physics of the inverted Hanle effect appearing in Si was experimentally investigated using a Si spin valve, where spin transport was realized up to room temperature. No inverted-Hanle-related signal was observed in a…

We investigate the correlation between spin signals measured in three-terminal (3T) geometry by the Hanle effect and the spin accumulation generated in a semiconductor channel in a lateral (Ga,Mn)As/GaAs Esaki diode device. We…

Spin accumulation in a paramagnetic semiconductor due to voltage-biased current tunneling from a polarized ferromagnet is experimentally manifest as a small additional spin-dependent resistance. We describe a rigorous model incorporating…

We demonstrate spin-accumulation signals controlled by the gate voltage in a metal-oxide-semiconductor field effect transistor structure with a Si channel and a CoFe/$n^{+}$-Si contact at room temperature. Under the application of a…

We find extraordinary behavior of the local two-terminal spin accumulation signals in ferromagnet (FM)/semiconductor (SC) lateral spin-valve devices. With respect to the bias voltage applied between two FM/SC Schottky tunnel contacts, the…

We have experimentally and theoretically investigated the electron spin transport and spin distribution at room temperature in a Si two-dimensional (2D) inversion channel of back-gate-type spin metal-oxide-semiconductor field-effect…

We investigate the origin of purported "spin accumulation" signals observed in local "three-terminal" (3T) measurements of ferromagnet/insulator/n-Si tunnel junctions using inelastic electron tunneling spectroscopy (IETS). Voltage bias and…

We derive a drift-diffusion equation for spin polarization in semiconductors by consistently taking into account electric-field effects and nondegenerate electron statistics. We identify a high-field diffusive regime which has no analogue…

In semiconductor spintronic devices, the semiconductor is usually lightly doped and nondegenerate, and moderate electric fields can dominate the carrier motion. We recently derived a drift-diffusion equation for spin polarization in the…

We provide a theoretical description of diffusive charge and spin transport in hybrid devices containing altermagnets. Based on recently derived drift--diffusion equations for coupled charge and spin dynamics and general boundary…

Spin injection in high-quality epitaxial Mn5Ge3 Schottky contacts on n-type Ge has been investigated using a three-terminal Hanle effect measurement. Clear Hanle and inverted Hanle signals with features characteristic of spin accumulation…

We report measurements of spin-dependent scattering of conduction electrons by neutral donors in an accumulation-mode field-effect transistor formed in isotopically enriched silicon. Spin-dependent scattering was detected using electrically…

We show that the propagation of spin polarized carriers may be dramatically affected by {\em inhomogeneous} electric fields. Surprisingly, the spin diffusion length is found to strongly depend on the sign and magnitude of electric field…

We study the effect of spin injection into a Luttinger liquid. The spin-injection-detection setup of Johnson and Silsbee is considered; here spins injected into the Luttinger liquid induce, across an interface with a ferromagnetic metal,…

We have studied the spin transport characteristics of a spin metal-oxide-semiconductor field-effect transistor (spin MOSFET), particularly the bias voltage dependence of the electron spin polarization P_S in Si and the magnetoresistance…