相关论文: Characterisation of a Thin Fully-Depleted SOI Pixe…
In this work, the radiation responses of silicon photonic passive devices built in silicon-on-insulator (SOI) technology are investigated through high energy neutron and 60Co gamma-ray irradiation. The wavelengths of both micro-ring…
This Letter introduces a Semiconductor-Under-Insulator (SUI) technology in InP for designing strip waveguides that interface InP photonic crystal membrane structures. Strip waveguides in InP-SUI are supported under an atomic layer deposited…
Silicon ring resonator-based devices, such as modulators, detectors, filters, and switches, play important roles in integrated photonic circuits for optical communication, high-performance computing, and sensing applications. However, the…
XRPIX is the monolithic X-ray SOI (silicon-on-insulator) pixel detector, which has a time resolution better than 10 $\rm{\mu}$s as well as a high detection efficiency for X-rays above 10 keV. XRPIX is planned to be installed on future X-ray…
We present the novel design of microfabricated, silicon-substrate based mirrors for use in cryogenic Fabry-Perot Interferometers (FPIs) for the mid-IR to sub-mm/mm wavelength regime. One side of the silicon substrate will have a…
We demonstrate a planar metamaterial based resonator and waveguide with strong light confinement in air based on a silicon-on-insulator (SOI) platform that exhibits scale invariance in the lateral direction. By embedding a sub wavelength…
We present waveguide integrated high-speed Si photodetector integrated with silicon nitride (SiN) waveguide on SOI platform for short reach data communication in 850 nm wavelength band. We demonstrate a waveguide couple Si pin photodetector…
This paper reports results on a detailed study of charge collection and signal-to-noise performance of CMOS monolithic pixel sensors before and after back-thinning and their application in a pixel beam telescope for the ALS 1.5 GeV $e^-$…
Monolithic Active Pixel Sensors (MAPS) have been developed since the late 1990s employing silicon substrate with a thin epitaxial layer in which deposited charge is collected by disordered diffusion rather than by drift in an electric…
We report on the quantitative determination of the strain map in a strained Silicon-On-Insulator (sSOI) line with a 200x70 nm^2 cross-section. In order to study a single line as a function of time, we used an X-ray nanobeam with relaxed…
We describe feedhorn-coupled polarization-sensitive detector arrays that utilize monocrystalline silicon as the dielectric substrate material. Monocrystalline silicon has a low-loss tangent and repeatable dielectric constant,…
We summarize the R&D activities on a novel semitransparent microstrip sensor to be used on laser-based alignment systems for silicon trackers. The new sensor is used both for particle tracking and laser detection. The aim of this research…
Silicon pixel detectors developed to meet LHC requirements were tested in a beam at CERN in the framework of the ATLAS collaboration. The experimental behaviour of irradiated and not-irradiated sensors in a magnetic field is discussed. The…
Silicon based micropattern detectors are essential elements of modern high energy physics experiments. Cost effectiveness and high radiation resistance are two important requirements for technologies to be used in inner tracking devices.…
The radiation response of a 0.25 um silicon-on-sapphire CMOS technology is characterized at the transistor and circuit levels utilizing both standard and enclosed layout devices. Device-level characterization showed threshold voltage change…
Silicon photonics is being extended from the near-infrared (near-IR) window of 1.3-1.5 {\mu}m for optical fiber communications to the mid-infrared (mid-IR) wavelength-band of 2 {\mu}m or longer for satisfying the increasing demands in many…
The fabrication of silicon photonic components in commercial CMOS-compatible foundries has revolutionized the impact of silicon photonics on advancing communication, quantum computing and artificial intelligence, due to their benefits of…
Diffractive/refractive optics, such as Phase Fresnel Lenses (PFL's), offer the potential to achieve excellent imaging performance in the x-ray and gamma-ray photon regimes. In principle, the angular resolution obtained with these devices…
We are developing monolithic pixel detectors based on SOI technology for high energy physics, X-ray applications and so on.To employ SOI pixel detector on such radiation environments, we have to solve effects of total ionizing dose (TID)…
The design and fabrication of a metal-dielectric-metal absorber that achieves strong absorption from the ultraviolet (UV) to the near-infrared (near-IR) spectrum are presented. The proposed nanostructure consists of a periodic titanium (Ti)…