相关论文: Physics-Based Compact Modeling of Double-Gate Grap…
I present a compact physics-based model of the drain current, charge and capacitance of graphene field-effect transistors, of relevance for exploration of DC, AC and transient behavior of graphene based circuits. The physical framework is a…
Graphene has attracted enormous interests due to its unique physical, mechanical, and electrical properties. Specially, graphene-based field-effect transistors (FETs) have evolved rapidly and are now considered as an option for conventional…
We present a circuit-compatible compact model of the intrinsic capacitances of graphene field-effect transistors (GFETs). Together with a compact drain current model, a large-signal model of GFETs is developed combining both models as a…
Based on explicit solution of current continuity equation in the graphene FET's channel the semi-classical diffusion-drift description of the carrier transport and I-V characteristics model has been developed. Role of rechargeable defects…
We present a compact physics-based model of the current-voltage characteristics of graphene field-effect transistors, of especial interest for analog and radio-frequency applications where bandgap engineering of graphene could be not…
We obtain the output characteristics of graphene field-effect transistors by using the charge-control model for the current, based on the solution of the Boltzmann equation in the field-dependent relaxation time approximation. Closed…
In this study, we report the progress made towards the definition of a modular compact modeling technology for graphene field-effect transistors (GFET) that enables the electrical analysis of arbitrary GFET-based integrated circuits. A set…
We obtain the output and transfer characteristics of graphene field-effect transistors by using the charge-control model for the current, based on the solution of the Boltzmann equation in the field-dependent relaxation time approximation.…
The analytical model of the small-signal current and capacitance characteristics of RF graphene FET is presented. The model is based on explicit distributions of chemical potential in graphene channels (including ambipolar conductivity at…
Bilayer graphene is a promising material for radio-frequency transistors because its energy gap might result in a better current saturation than the monolayer graphene. Because the great deal of interest in this technology, especially for…
We study the effect of local modulation of charge density and carrier type in graphene field effect transistors using a double top gate geometry. The two top gates lead to the formation of multiple \emph{p-n} junctions. Electron transport…
For the growth of emerging graphene field-effect transistor (GFET) technologies, a thorough characterization of on-wafer variability is required. Here, we report for the first time a physics-based compact model, which precisely describes…
In this paper we have developed a two dimensional (2D) analytical model for surface potential and drain current for a long channel Dual Material Gate (DMG) Silicon-on-Insulator (SOI) Tunneling Field Effect Transistor (TFET). This model…
The main target of this article is to propose for the first time a physics-based continuous and symmetric compact model that accurately captures IV experimental dependencies induced by geometrical scaling effects for graphene transistor…
We present a physics-based circuit-compatible model for double-gated two-dimensional semiconductor based field effect transistors, which provides explicit expressions for the drain current, terminal charges and intrinsic capacitances. The…
Graphene field-effect transistors with source/drain contacts made of metals that can be easily oxidized such as ferromagnetic metals often display a double dip structure in the transfer characteristics because of charge density depinning at…
A physics-based model for the surface potential and drain current for monolayer transition metal dichalcogenide (TMD) field-effect transistor (FET) is presented. Taking into account the 2D density-of-states of the atomic layer thick TMD and…
In this work, double-gated field effect transistors manufactured from monolayer graphene are investigated. Conventional top-down CMOS-compatible processes are applied except for graphene deposition by manual exfoliation. Carrier mobilities…
In this paper, we have worked out a pseudo two dimensional (2D) analytical model for surface potential and drain current of a long channel p-type Dual Material Gate (DMG) Gate All-Around (GAA) nanowire Tunneling Field Effect Transistor…
A T-shaped field-effect transistor, made out of a pair of two-dimensional electron gases, is modeled and studied. A simple numerical model is developed to study the electron distribution vs. applied gate voltage for different gate lengths.…