相关论文: Disorder induced quantized conductance with fracti…
Impurities and defects are ubiquitous in topological insulators (TIs) and thus understanding the effects of disorder on electronic transport is important. We calculate the distribution of the random conductance fluctuations $P(G)$ of…
Sample-to-sample fluctuations of the time-dependent conductance of a system with static disorder have been studied by means of diagrammatic theory and microwave pulsed transmission measurements. The fluctuations of time-dependent…
In this paper we report the measurement of conductance fluctuations in single crystals of Si made metallic by heavy doping (n \approx 2-2.5n_c, n_c being critical composition at Metal-Insulator transition). Since all dimensions (L) of the…
We analyse in detail Mott's variable range hopping in one dimension, expanding on earlier work by Raikh and Ruzin. We show that the large conductance fluctuations in disordered insulators result from a subtle interplay between purely…
We consider the fluctuation conductivity in the critical region of a disorder induced quantum phase transition in layered d-wave superconductors. We specifically address the fluctuation contribution to the system's conductivity in the limit…
Quantum conductance of 3D ballistic wires with idealy flat boundaries obeys fluctuations with the properties quite distinguishable from those of universal conductance fluctuations: Both their amplitude and the sensitivity to the magnetic…
A key feature of topological insulators (TI) is symplectic symmetry of the Hamiltonian which changes to unitary when time reversal symmetry is lifted and the topological phase transition occurs. However, such a crossover has never been…
Topological insulators have been extended to higher-order versions that possess topological hinge or corner states in lower dimensions. However, their robustness against disorder is still unclear. Here, we theoretically investigate the…
We study how interacting localized degrees of freedom are affected by slow thermal fluctuations that change the effective local disorder. We compute the time-averaged (annealed) conductance in the insulating regime and find three distinct…
Features of a topological phase, and edge states in particular, may be obscured by overlapping in energy with a trivial conduction band. The topological nature of such a conductor, however, is revealed in its transport properties,…
We study conductance fluctuations in disordered quantum wires with unitary symmetry focusing on the case in which the number of conducting channels in one propagating direction is not equal to that in the opposite direction. We consider…
As an exotic quantum condensed matter, the topological insulator (TI) is a bulk-insulating material with a Dirac-type conducting surface state. Such dissipationless transport of topological surface states (TSSs) is protected by the…
Quantum conductance fluctuations are investigated in disordered 3D topological insulator quantum wires. Both experiments and theory reveal a new transport regime in a mesoscopic conductor, pseudo-ballistic transport, for which ballistic…
We present a theoretical approach to describe the 2D transport properties of the surfaces of three dimensional topological insulators (3DTIs) including disorder and phonon scattering effects. The method that we present is able to take into…
In the three-dimensional topological insulator (TI), the physics of doped semiconductors exists literally side-by-side with the physics of ultra-relativistic Dirac fermions. This unusual pairing creates a novel playground for studying the…
We have observed reproducible conductance fluctuations at low temperature in a small GaAs:Si wire driven across the Anderson transition by the application of a gate voltage. We analyse quantitatively the log-normal conductance statistics in…
We study conductance fluctuations in random resistor networks with hyperuniform bond disorder, where the fluctuations of the number of bonds present in a test volume $V$ scale as $V^{-a}$ with $a > 1/2$. Since small changes in the…
We investigate the effects of disorder in Floquet topological insulators (FTIs) occurring in semiconductor quantum wells. Such FTIs are induced by resonantly driving a transition between the valence and conduction band. We show that when…
We study the conductance fluctuation in topological semimetals. Through statistic distribution of energy levels of topological semimetals, we determine the dominant parameters of universal conductance fluctuation (UCF), i.e., the number of…
We show how a recent proposal to obtain the distribution of conductances in three dimensions (3D) from a generalized Fokker-Planck equation for the joint probability distribution of the transmission eigenvalues can be implemented for all…