相关论文: High purity semi-insulating 4H-SiC epitaxial layer…

Pulsed laser deposition has been used to deposit Y1Ba2Cu3O7 layer on CeO2 buffer layers on (1102) sapphire. Both layers are epitaxial with the (110) direction of the CeO2 layer aligned with the <2021> direction of the sapphire substrate.…

The early stages of epitaxial graphene layer growth on the Si-terminated 6H-SiC(0001) are investigated by Auger electron spectroscopy (AES) and depolarized Raman spectroscopy. The selection of the depolarized component of the scattered…

Structuring Si in arrays of vertical high aspect ratio pillars, ranging from nanoscale to macroscale feature dimensions, is essential for producing functional interfaces for many applications. Arrays of silicon 3D nanostructures are needed…

The Moir\'{e} structure of epitaxial graphene mono layer grown on 6H-SiC(0001) has been investigated recently by grazing incidence fast atom diffraction, and the results were compared with the calculation of the structure \textit{ab initio}…

High-precision resistance noise measurements indicate that the epitaxial CoSi$_2$/Si hetero-structures at 150 K and 2 K (slightly above its superconducting transition temperature $T_c$ of 1.54 K) exhibit an unusually low 1/f noise level in…

We report a polarization-induced 2D electron gas (2DEG) at an epitaxial AlBN/GaN heterojunction grown on a SiC substrate. Using this 2DEG in a long conducting channel, we realize ultra-thin barrier AlBN/GaN high electron mobility…

Atomically flat thin films of topological insulator Bi2Se3 have been grown on double-layer graphene formed on 6H-SiC(0001) substrate by molecular beam epitaxy. By a combined study of reflection high energy electron diffraction and scanning…

The electronic and lattice dynamical properties of compressed solid SiH$_{4}$ have been calculated in the pressure range up to 300 GPa with density functional theory. We find that structures having a layered network with eight-fold…

Color center PL5 in 4H silicon carbide (4H-SiC) has drawn significant attention due to its room-temperature quantum coherence properties and promising potential of quantum sensing applications. The preparation of PL5 ensemble is a critical…

Elevated temperature STM measurements have shown that one key phase during gas-source homoepitaxy of Si(001) is the formation of clean Si ad-dimers from hydrogenated ad-dimers, though the mechanism for this formation is unknown. We present…

Relaxed atomic geometries and chemisorption energies have been calculated for the dissociative adsorption of molecular hydrogen on vicinal Si(001) surfaces. We employ density-functional theory, together with a pseudopotential for Si, and…

We created 4 p-Si models and 4 p-Si:H models all with 50% porosity. The models contain 32, 108, 256 and 500 silicon atoms with a pore parallel to one of the simulational cell axes and a regular cross-section. We obtained the densities of…

Investigation of HV-CMOS sensors for use as a tracking detector in the ATLAS experiment at the upgraded LHC (HL-LHC) has recently been an active field of research. A potential candidate for a pixel detector built in Silicon-On-Insulator…

To develop silicon-based spintronic devices, we have explored high-quality ferromagnetic Fe$_{3}$Si/silicon (Si) structures. Using low-temperature molecular beam epitaxy at 130 $^circ$C, we realize epitaxial growth of ferromagnetic…

The method of software analysis of high-resolution TEM images using the peak pairs algorithm in combination with Raman spectroscopy was employed to study lattice deformations in Ge/Si(001) structures with low-temperature Ge quantum dots. It…

IV-VI diluted magnetic semiconductor Ge1-xCrxTe layers up to x=0.1 were grown on SrF2 substrates by molecular beam epitaxy. In site reflection high-energy electron diffraction shows a streaky pattern with sixfold symmetry in the plane for…

Hydrogenated amorphous silicon (a-Si:H) has remarkable radiation resistance properties and can be deposited on a lot of different substrates. A-Si:H based particle detectors have been built since mid 1980s as planar p-i-n or Schottky diode…

Metal/superconductor/semiconductor (Ag/HgBaCaCuO/CdSe) heterostructures have been successfully fabricated using pulse-electrodeposition technique. The electrochemical parameters are optimized and diffusion free growth of CdSe onto…

We present the direct heteroepitaxial growth of high-quality InGaAs quantum dots on silicon, enabling scalable, cost-effective quantum photonics devices compatible with CMOS technology. GaAs heterostructures are grown on silicon via a GaP…

Due to the increased commercial availability, wide-bandgap semiconductors and their radiation hardness have recently received increased interest from the particle physics community. 4H-Silicon Carbide (SiC), especially, is an attractive…