相关论文: Dangling bonds in a-Si:H revisited: A combined Mul…
We report an experimetal study by Electron Paramagnetic Resonance (EPR) of E'-delta point defect induced by gamma ray irradiation in amorphous SiO2. We obtained an estimetion of the intensity of the 10 mT doublet characterizing the EPR…
A computational study of the Electron Paramagnetic Resonance (EPR) $g$-tensors and hyperfine tensors of Li and Ga vacancies in LiGaO$_2$ is presented. Density Functinal Theory (DFT) calculations are carried out of the Ga and Li vacancies…
SiC based metal-oxide-semiconductor field-effect transistors (MOSFETs) have gained a significant importance in power electronics applications. However, electrically active defects at the SiC/SiO$_2$ interface degrade the ideal behavior of…
We report a study by electron paramagnetic resonance (EPR) on the E'_\alpha point defect in amorphous silicon dioxide (a-SiO2). Our experiments were performed on gamma-ray irradiated oxygen-deficient materials and pointed out that the 29Si…
Multi-high-frequency electron paramagnetic resonance(EPR) spectrum for a supermolecular dimer $[ Mn_4]_2$ of single-molecule magnets recently reported [S. Hill, R. S. Edwards, N. Aliaga-Alcalde and G. Christou(HEAC), Science 302, 1015…
A structural model of hydrogenated amorphous silicon containing an isolated dangling bond is used to investigate the effects of electron interactions on the electronic level splittings, localization of charge and spin, and fluctuations in…
Electron paramagnetic resonance (EPR) is a valuable tool for physics, chemistry, biology and medicine, providing complementary spectroscopic information to NMR. It has long been known that EPR at high magnetic fields offers greater spectral…
We present a first-principles study of the structural, electronic, and optical properties of hydrogenated amorphous silicon (a-Si:H). To this end, atomic configurations of a-Si:H with 72 and 576 atoms respectively are generated using…
We report an experimental study by electron paramagnetic resonance (EPR) of gamma ray irradiation induced point defects in oxygen deficient amorphous SiO2 materials. We have found that three intrinsic (E'gamma, E'delta and triplet) and one…
From density functional calculations, we show that localized states stemming from defects or topological disorder exhibit an anomalously large electron-phonon coupling. We provide a simple analysis to explain the observation and perform a…
The fourfold degeneracy of the boron acceptor ground state in silicon, which is easily lifted by any symmetry breaking perturbation, allows for a strong inhomogeneous broadening of the boron-related electron paramagnetic resonance (EPR)…
We present a state interaction spin-orbit coupling method to calculate electron paramagnetic resonance (EPR) $g$-tensors from density matrix renormalization group wavefunctions. We apply the technique to compute $g$-tensors for the…
Abstract Despite advances toward improving the quality of $p$-type 4H-SiC substrates and layers, we still have no model capable of accounting for the multitude of boron-related optical, junction, and paramagnetic resonance experiments…
We describe a simple experimental method to detect electron paramagnetic resonance (EPR) in polycrystalline 2,2-diphenyl-1-picrylhydrazyl (DPPH) sample, the standard g-marker for EPR spectroscopy, without using a cavity resonator or a…
In the present Ph.D. Thesis we report an experimental investigation on the effects of gamma- and beta-ray irradiation and of subsequent thermal treatment on many types of a-SiO2 materials, differing in the production methods, OH- and…
We study by means of first-principles pseudopotential method the coordination defects in a-Si and a-Si:H, also in their formation and their evolution upon hydrogen interaction. An accurate analysis of the valence charge distribution and of…
The intrinsic iron(III) impurity center in polycrystalline lead titanate was investigated by means of high-frequency electron paramagnetic resonance (EPR) spectroscopy in order to determine the local-environment sensitive fine structure…
We describe instrumentation for a high-frequency electron paramagnetic resonance (EPR) and pulsed electron-electron double resonance (PELDOR) spectroscopy. The instrumentation is operated in the frequency range of 107$-$120 GHz and…
We report a combined study by optical absorption (OA) and electron paramagnetic resonance (EPR) spectroscopy on the E'-alpha point defect in amorphous silicon dioxide (a-SiO2). This defect has been studied in beta-ray irradiated and…
We report on terahertz (THz) electron paramagnetic resonance generalized spectroscopic ellipsometry (THz-EPR-GSE). Measurements of the field and frequency dependencies of the magnetic response due to the spin transitions associated with the…