相关论文: Barrier Lowering and Backscattering Extraction in …
Measuring carrier mobility as a function of the carrier density in semiconductors using Hall effect is the gold standard for quantifying scattering mechanisms. However, for nanostructures, the Hall effect is not applicable, and the density…
A common issue in low temperature measurements of enhancement-mode metal-oxide-semiconductor (MOS) field-effect transistors (FETs) in the low electron density regime is the high contact resistance dominating the device impedance. In that…
The electron transport properties of atomically thin semiconductors such as MoS2 have attracted significant recent scrutiny and controversy. In this work, the scattering mechanisms responsible for limiting the mobility of single layer…
We have presented a compact MOSFET model, which allows us to describe the I-V characteristics of irradiated long-channel and short-channel transistors in all operation modes at different measurement temperatures and interface trap…
The Drude-Kadanoff-Martin model is a simple low energy and long wavelength description of charge transport, parameterised by the current relaxation timescale $\tau$, charge diffusivity $D$ and charge compressibility $\chi$. We obtain sharp…
Inelastic scattering and carrier capture by defects in semiconductors are the primary causes of hot-electron-mediated degradation of power devices, which holds up their commercial development. At the same time, carrier capture is a major…
2D and 4D transverse phase-space of a low-energy ion-beam is measured with two of the most common emittance scanners. The article covers the description of the installation, the setup, the settings, the experiment and the benchmark of the…
High quality scanning transmission electron microscopy (STEM) data acquisition and analysis has become increasingly important due to the commercial demand for investigating the properties of complex materials such as battery cathodes;…
Two-dimensional (2D) van der Waals semiconductors are appealing for low-power transistors. Here, we show the feasibility in enhancing carrier mobility in 2D semiconductors through engineering the vertical distribution of carriers confined…
A model for the extraction of the charge density dependent mobility and variable contact resistance in thin film transistors is proposed by performing a full derivation of the current-voltage characteristics both in the linear and…
The ability to design the scattering properties of electromagnetic structures is of fundamental interest in optical science and engineering. While there has been great practical success applying local optimization methods to electromagnetic…
We investigate the conductivity of charge carriers confined to a two-dimensional system with the non-parabolic dispersion $k^N$ with $N$ being an arbitrary natural number. A delta-shaped scattering potential is assumed as the major source…
The mobility of emerging (e.g., two-dimensional, oxide, organic) semiconductors is commonly estimated from transistor current-voltage measurements. However, such devices often experience contact gating, i.e., electric fields from the gate…
Efficient and controlled charge transport in networks of semiconducting single-walled carbon nanotubes is the basis for their application in electronic devices, especially in field-effect transistors and thermoelectrics. The recent advances…
The charge-carrier transport properties of ultrathin metallic films are analysed with ab-initio methods using the density functional theory (DFT) on free-standing single crystalline slabs in the thickness range between 1 and 8 monolayers…
A simulation framework that couples atomistic electronic structures to Boltzmann transport formalism is developed and applied to calculate the transport characteristics of thin silicon nanowires (NWs) up to 12nm in diameter. The…
We introduce a novel reflection-mode diffraction tomography technique that enables simultaneous recovery of forward and backward scattering information for high-resolution 3D refractive index reconstruction. Our technique works by imaging a…
This work extends the minimum-dissipation model of large-eddy simulation and symmetry-preserving discretization to account for active or passive scalar transport and complex physical mechanisms.This novel scalar-minimum-dissipation model…
Lorentz transmission electron microscopy (LTEM) combined with in-situ magnetizing experiments is a powerful tool for the investigation of the magnetization of the reversal process at the micron scale. We have implemented this tool on a…
This paper is dedicated to design a direct sampling method of inverse electromagnetic scattering problems, which uses multi-frequency sparse backscattering far field data for reconstructing the boundary of perfectly conducting obstacles. We…