相关论文: Barrier Lowering and Backscattering Extraction in …
The work estimates the minimum channel length of the MOSFET transistor, which is the bacis device of modern electronics. Taking into account the real shape of potential barrier in the channel shows that the electron tunnels through a region…
Strongly interacting electrons in clean two-dimensional devices are theorized to exhibit many distinct transport regimes, such as ballistic, hydrodynamic, or diffusive. Realistic samples often lie in crossover regimes between these…
A microscopic model of surface roughness (SR) scattering in inversion layers of bulk-MOSFETs based on Ando's linear model is proposed. Taking into account the stochastic nature of roughness position induced by discontinuity of the spatial…
Cross-jet transport of passive scalars in a kinematic model of the meandering laminar two-dimensional incompressible flow which is known to produce chaotic mixing is studied. We develop a method for detecting barriers to cross-jet transport…
We report a scattering matrix theory for dynamic and nonlinear transport in coherent mesoscopic conductors. In general this theory allows predictions of low frequency linear dynamic conductance, as well as weakly nonlinear DC conductance.…
Metal-insulator transitions in clean, crystalline solids can be driven by two distinct mechanisms. In a conventional insulator, the charge carrier concentration vanishes, when an energy gap separates filled and unfilled electronic states.…
We describe the design and current performance of the high-flux backscattering spectrometer located at the NIST Center for Neutron Research. The design incorporates several state-of-the-art neutron optical devices to achieve the highest…
This article is devoted to the design of importance sampling method for the Monte Carlo simulation of a linear transport equation. This model is of great importance in the simulation of inertial confinement fusion experiments. Our method is…
In this article, a novel two-path model is proposed to quantitatively explain sub-threshold characteristics of back-gated Schottky barrier FETs (SB-FETs) from 2D channel materials. The model integrates the 'conventional' model for SB-FETs…
A novel method for correcting the effect of nonlinear distortion in orthogonal frequency division multiplexing signals is proposed. The method depends on adaptively selecting the distortion over a subset of the data carriers, and then using…
A seemingly anomalous enhancement of electron mobility in strained silicon inversion layers at high sheet densities has exposed a conspicuous gap between device physics theory and experiment in recent years. We show that the root of this…
By using scattering in near field techniques, a microscope can be easily turned into a device measuring static and dynamic light scattering, very useful for the characterization of nanoparticle dispersions. Up to now, microscopy based…
We present a theory of tunneling and resonant transitions in one-dimensional molecular systems which is based on Green's function theory of electron sub-barrier scattering off the structural units (or functional groups) of a molecular…
We calculate the electronic transport properties of a system which is irradiated by a homogeneous microwave field. Within a Boltzmann equation approach, a general expression for the conductivity tensor is derived and evaluated for a quasi…
We present detailed simulations addressing recent electronic interference experiments, where a metallic gate is used to locally modify the Fermi wave-length of the charge carriers. Our numerical calculations are based on a solution of the…
Methodologies for characterization of the lateral indentation of silicon-germanium (SiGe) nanosheets using different non-destructive and in-line compatible metrology techniques are presented and discussed. Gate-all-around nanosheet device…
A new method, based on a Reverse Monte Carlo technique and aimed at the inverse problem in the analysis of interstellar (intergalactic) absorption lines is presented. We consider the process of line formation in media with a stochastic…
We present theory for ion and water transport through reverse osmosis membranes based on a Maxwell-Stefan framework combined with hydrodynamic theory for the reduced motion of particles in thin pores. We include all driving forces and…
Carrier mobility in bulk semiconductors is typically governed by electron-phonon (e-ph) scattering. In nanostructures, spatial confinement can lead to significant surface scattering, lowering mobility and breaking the spatial homogeneity…
Accurate determination of electronic stopping cross sections is critical for ion beam analysis and related applications. While transmission methods are well established, backscattering approaches remain less explored from a metrological…