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We demonstrate that a simple phenomenological approach can be used to simulate electronic conduction in molecular wires under thermal effects induced by the surrounding environment. This "Landauer-B\"uttiker's probe technique" can properly…

化学物理 · 物理学 2015-08-25 Michael Kilgour , Dvira Segal

We propose a direct experimental extraction technique for trapped charges and quantitative energy band diagrams in the FeFETs with metal-insulator-ferroelectric-insulator-semiconductor (MIFIS) structure, derived from the physical…

Gated molybdenum disulphide (MoS2) exhibits a rich phase diagram upon increasing electron doping, including a superconducting phase, a polaronic reconstruction of the bandstructure, and structural transitions away from the 2H polytype. The…

介观与纳米尺度物理 · 物理学 2020-08-20 Davide Romanin , Thomas Brumme , Dario Daghero , Renato S. Gonnelli , Erik Piatti

Recent theoretical and experimental advances have shed light on the existence of so-called `perfectly transmitting' wavefronts with transmission coefficients close to 1 in strongly backscattering random media. These perfectly transmitting…

光学 · 物理学 2015-06-18 Curtis Jin , Raj Rao Nadakuditi , Eric Michielssen , Stephen Rand

Sound scattering by a finite width beam on a single rigid body rotation vortex flow is detected by a linear array of transducers (both smaller than a flow cell), and analyzed using a revised scattering theory. Both the phase and amplitude…

混沌动力学 · 物理学 2009-11-10 Sh. Seifer , V. Steinberg

Variability of low frequency noise (LFN) in MOSFETs is bias-dependent. Moderate- to large-sized transistors commonly used in analog/RF applications show 1/f-like noise spectra, resulting from the superposition of random telegraph noise…

介观与纳米尺度物理 · 物理学 2020-09-03 Nikolaos Mavredakis , Nikolaos Makris , Predrag Habas , Matthias Bucher

In this letter, we propose a reduced-order model to bridge the particle transport mechanics and the macroscopic fluid dynamics in the highly scattered regime. A rigorous mathematical derivation and a concise physical interpretation are…

数学物理 · 物理学 2023-09-22 Yuan Hu , Chang Liu , Huayun Shen

A gated Hall-bar device is made from an epitaxially grown, free-standing InSb nanosheet on a hexagonal boron nitride (hBN) dielectric/graphite gate structure and the electron transport properties in the InSb nanosheet are studied by…

介观与纳米尺度物理 · 物理学 2022-08-22 Li Zhang , Dong Pan , Yuanjie Chen , Jianhua Zhao , H. Q. Xu

A recent line of work has focused on the use of low-density generator matrix (LDGM) codes for lossy source coding. In this paper, wedevelop a generic technique for deriving lower bounds on the rate-distortion functions of binary linear…

信息论 · 计算机科学 2008-08-18 A. G. Dimakis , M. J. Wainwright , K. Ramchandran

The simulation of transmission electron microscopy (TEM) images or diffraction patterns is often required to interpret their contrast and extract specimen features. This is especially true for high-resolution phase-contrast imaging of…

材料科学 · 物理学 2021-03-30 Jacob Madsen , Timothy J. Pennycook , Toma Susi

One-dimensional topological superconductors accommodate a pair of Majorana zero modes at their ends. In an interferometer containing such a topological superconductor, electron transport is significantly affected by the Majorana zero modes…

介观与纳米尺度物理 · 物理学 2026-05-28 Kyosuke Mizuno , Yuto Takarabe , Yositake Takane

In view of its local character, the semiclassical or Boltzmann theory is intrinsically unable to describe transport phenomena on ultrashort space and time scales, and to this purpose genuine quantum-transport approaches are imperative. By…

介观与纳米尺度物理 · 物理学 2014-02-13 Roberto Rosati , Fausto Rossi

In this work, we describe the charge transport in two-dimensional (2D) Schottky barrier field-effect transistors (SB-FETs) based on the carrier injection at the Schottky contacts. We first develop a numerical model for thermionic and…

应用物理 · 物理学 2023-07-12 Ashwin Tunga , Zijing Zhao , Ankit Shukla , Wenjuan Zhu , Shaloo Rakheja

We formulate a theory of transport in graphene bilayers in the weak momentum scattering regime in such a way as to take into account contributions to the electrical conductivity to leading and next-to-leading order in the scattering…

介观与纳米尺度物理 · 物理学 2015-05-13 Dimitrie Culcer , R. Winkler

As metal-oxide-semiconductor field-effect transistors (MOSFET) channel lengths (Lg) are scaled to lengths shorter than Lg<8 nm source-drain tunneling starts to become a major performance limiting factor. In this scenario a heavier transport…

介观与纳米尺度物理 · 物理学 2015-06-15 Saumitra Mehrotra , SungGeun Kim , Tillmann Kubis , Michael Povolotskyi , Mark Lundstrom , Gerhard Klimeck

While space-charge-limited current measurements are often used to characterize charge-transport in relatively intrinsic, low-mobility semiconductors, it is currently difficult to characterize lightly or heavily doped semiconductors with…

应用物理 · 物理学 2020-12-02 Jason A. Röhr , Roderick C. I. MacKenzie

We provide the first observation of weak localization in high carrier density two-dimensional electron gas in AlInN/GaN heterostructures; at low temperatures and low fields the conductivity increases with increasing magnetic field. Weak…

介观与纳米尺度物理 · 物理学 2018-02-14 Leizhi Wang , Ming Yin , Asif Khan , Sakib Muhtadi , Fatima Asif , Eun Sang Choi , Timir Datta

Based on an invariant embedding principle for the backscattering function we calculate the electron emission yield for metal surfaces at very low electron impact energies. Solving the embedding equation within a quasi-isotropic…

材料科学 · 物理学 2022-04-06 F. X. Bronold , H. Fehske

We present a first-principles framework to extract deformation potentials in Silicon based on density-functional theory (DFT) and density-functional perturbation theory (DFPT). We compute the electronic band structures, phonon dispersion…

材料科学 · 物理学 2021-11-05 Zhen Li , Patrizio Graziosi , Neophytos Neophytou

Understanding the movement of charge within organic semiconducting films is crucial for applications in photo-voltaics and flexible electronics. We study the sensitivity of the electrical conductance of a silicon nanowire to changes of…

介观与纳米尺度物理 · 物理学 2019-05-20 M. V. Klymenko , J. A. Vaitkus , J. H. Cole