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Two-dimensional (2D) semiconductor of MoS2 has great potential for advanced electronics technologies beyond silicon1-9. So far, high-quality monolayer MoS2 wafers10-12 are already available and various demonstrations from individual…

The sensitive dependence of electronic and thermoelectric properties of MoS$_2$ on the applied strain opens up a variety of applications in the emerging area of straintronics. Using first principles based density functional theory…

材料科学 · 物理学 2015-06-22 Swastibrata Bhattacharyya , Tribhuwan Pandey , Abhishek K. Singh

Understanding how atomic defects shape the nanoscale optical properties of two-dimensional (2D) semiconductors is essential for advancing quantum technologies and optoelectronics. Using scanning tunneling spectroscopy (STS) and luminescence…

Defects can strongly influence the electronic, optical and mechanical properties of 2D materials, making defect stability under different thermodynamic conditions crucial for material-property engineering. In this paper, we present an…

材料科学 · 物理学 2023-08-10 Alaa Akkoush , Yair Litman , Mariana Rossi

Semiconducting monolayer of 2D material are able to concatenate multiple interesting properties into a single component. Here, by combining opto-mechanical and electronic measurements, we demonstrate the presence of a partial 2H-1T phase…

Monolayer transition metal dichalcogenides are novel, gapped two-dimensional materials. Toward device applications, we consider MoS$_2$ layers on dielectrics, in particular in this work, the effect of vacancies on the electronic structure.…

介观与纳米尺度物理 · 物理学 2016-06-10 Amithraj Valsaraj , Jiwon Chang , Amritesh Rai , Leonard F. Register , Sanjay K. Banerjee

The possibility of spatially resolving the optical properties of atomically thin materials is especially appealing as they can be modulated at the micro- and nanoscale by reducing their thickness, changing the doping level or applying a…

介观与纳米尺度物理 · 物理学 2016-03-23 Andres Castellanos-Gomez , Jorge Quereda , Herko P. van der Meulen , Nicolás Agraït , Gabino Rubio-Bollinger

A new phototransistor based on the mechanically-exfoliated single-layer MoS2 nanosheet is fabricated and its light-induced electric properties are investigated in details. Photocurrent generated from the phototransistor is solely determined…

材料科学 · 物理学 2013-10-31 Zongyou Yin , Hai Li , Hong Li , Lin Jiang , Yumeng Shi , Yinghui Sun , Gang Lu , Qing Zhang , Xiaodong Chen , Hua Zhang

The adsorption of an alkali-metal submonolayer on graphene occupying every third hexagon of the honeycomb lattice in a commensurate $(\sqrt{3}\times\sqrt{3})R30^\circ$ arrangement induces an energy gap in the spectrum of graphene. To…

材料科学 · 物理学 2009-01-27 M. Farjam , H. Rafii-Tabar

Monolayer Mo$_2$C is a new member of two-dimensional materials. Here the electronic structure and lattice dynamics of monolayer Mo$_2$C are calculated. According to the electron-phonon interaction, it is predicted that monolayer Mo$_2$C…

介观与纳米尺度物理 · 物理学 2017-01-24 Jun-Jie Zhang , Shuai Dong

The design of low-dimensional organic-inorganic interfaces for the next generation of opto-electronic applications requires an in-depth understanding of the microscopic mechanisms ruling electronic interactions in these systems. In this…

We study field effect transistor characteristics in etched single layer MoS2 nanoribbon devices of width 50nm with ohmic contacts. We employ a SF6 dry plasma process to etch MoS2 nanoribbons using low etching (RF) power allowing very good…

介观与纳米尺度物理 · 物理学 2019-04-02 D. Kotekar-Patil , J. Deng , S. L. Wong , Chit Siong Lau , Kuan Eng Johnson Goh

In this work, we have presented a first principle simulation study on the electronic properties of MoS2/MX2/MoS2 (M=Mo or W; X=S or Se) trilayer heterostrcuture. We have investigated the effect of stacking configuration, bi-axial…

计算物理 · 物理学 2018-02-27 Kanak Datta , Quazi D. M. Khosru

We perform classic molecular dynamics simulations to comparatively investigate the mechanical properties of single-layer MoS2 and a graphene/MoS2/graphene heterostructure under uniaxial tension. We show that the lattice mismatch between…

材料科学 · 物理学 2014-07-29 Jin-Wu Jiang , Harold S. Park

Room-temperature superparamagnetism due to a large magnetic anisotropy energy (MAE) of a single atom magnet has always been a prerequisite for nanoscale magnetic devices. Realization of two dimensional (2D) materials such as single-layer…

介观与纳米尺度物理 · 物理学 2018-04-18 M. A. Khan , Michael N. Leuenberger

Irradiation with high-energy particles has recently emerged as an effective tool for tailoring the properties of two-dimensional transition metal dichalcogenides. In order to carry out an atomically-precise manipulation of the lattice, a…

材料科学 · 物理学 2018-04-13 Michele Pizzochero , Oleg V. Yazyev

MoS2 is one of the most investigated and promising transition-metal dichalcogenides. Its popularity stems from the interesting properties of the monolayer phase, which can serve as the fundamental block for numerous applications. In this…

材料科学 · 物理学 2024-07-30 Riccardo Dettori , Francesco Siddi , Luciano Colombo , Claudio Melis

Heterostructures are ubiquitous in many optoelectronic devices and as photocatalysts. One of the key features of a heterojunction is the proper band alignment between the two materials. Estimation of the correct relative band positions with…

介观与纳米尺度物理 · 物理学 2024-08-13 Raheel Hammad , Snehith Adabala , Soumya Ghosh

We have investigated the impact of toxic N2O gas upon structural and electronic properties of 2D MoSe2 monolayer using DFT approach. In this work, as a result of N2O gas absorption, charge transfer, band gap and density of states (DOS) are…

材料科学 · 物理学 2020-08-18 N. Mishra , Bramha P. Pandey

We propose an effective lattice Hamiltonian for monolayer MoS$_2$ in order to describe the low-energy band structure and investigate the effect of perpendicular electric and magnetic fields on its electronic structure. We derive a…

介观与纳米尺度物理 · 物理学 2013-09-04 Habib Rostami , Ali G. Moghaddam , Reza Asgari