相关论文: Leakage Current Reduction Techniques in Poly-Si TF…

Quantum codes excel at correcting local noise but fail to correct leakage faults that excite qubits to states outside the computational space. Aliferis and Terhal have shown that an accuracy threshold exists for leakage faults using gadgets…

This paper presents a low-power cache architecture based on the series interconnection of conventional 6-transistor static random-access memory (6T SRAM) cells. The proposed approach aims to reduce leakage power in SRAM-based cache memories…

We provide a detailed study of the interface Trap Assisted Tunneling (TAT) mechanism in tunnel field effect transistors to show how it contributes a major leakage current path before the Band To Band Tunneling (BTBT) is initiated. With a…

We present a model for the leakage current in ferroelectric thin- film capacitors which explains two of the observed phenomena that have escaped satisfactory explanation, i.e. the occurrence of either a plateau or negative differential…

This paper presents a design flow for an improved selective multi-threshold(Selective-MT) circuit. The Selective-MT circuit is improved so that plural MT-cells can share one switch transistor. We propose the design methodology from…

A vertical partial gate carbon nanotube (CNT) field-effect transistor (FET), which is amenable to the vertical CNT growth process and offers the potential for a parallel CNT array channel, is simulated using a self-consistent atomistic…

Side-channel attacks are important security challenges as they reveal sensitive information about on-chip activities. Among such attacks, the thermal side-channel has been shown to disclose the activities of key functional blocks and even…

This paper presents a novel encoding method for fine time data of a tapped delay line (TDL) time-to-digital Converter (TDC). It is based on divide-and-conquer strategy, and has the advantage of significantly reducing logic resource…

We report precise TCAD simulations of IHEP-IME-v1 Low Gain Avalanche Diode (LGAD) calibrated by secondary ion mass spectroscopy (SIMS). Our setup allows us to evaluate the leakage current, capacitance, and breakdown voltage of LGAD, which…

Realizing the full potential of quantum computing requires large-scale quantum computers capable of running quantum error correction (QEC) to mitigate hardware errors and maintain quantum data coherence. While quantum computers operate…

By generalizing the classical linear response theory of stick percolation to nonlinear regime, we find that the drain current of a Nanobundle Thin Film Transistor (NB-TFT) is described under a rather general set of conditions by a universal…

Transport measurements are fundamental for understanding condensed matter phenomena, from superconductivity to the fractional quantum Hall effect. Analogously, they can be powerful tools for probing synthetic quantum matter in quantum…

Non-Abelian geometric phases acquired in cyclic quantum evolution can be utilized as natural resources for constructing robust holonomic gates for quantum information processing. Recently, an extensible holonomic quantum computation (HQC)…

Security and energy are considered as the most important parameters for designing and building a computing system nowadays. Today's attacks target different layers of the computing system (i.e. software and hardware). Introduction of new…

We measure the rectified dc currents resulting when a 3-terminal semiconductor device with gate-dependent conductance is driven with an ac gate voltage. The rectified currents exhibit surprisingly complex behaviour as the dc source-drain…

A widely used technique to mitigate the gate leakage in the ultra-scaled metal oxide semiconductor field effect transistors (MOSFETs) is the use of high-k dielectrics, which provide the same equivalent oxide thickness (EOT) as $\rm SiO_2$,…

High-current superconducting cables are emerging as key enablers for next-generation power transmission systems; however, their deployment is often limited by transport AC losses. Hybrid superconducting cables combining…

Metal oxide thin-film transistors are fast becoming a ubiquitous technology for application in driving backplanes of organic light-emitting diode displays. Currently all commercial products rely on metal oxides processed via physical vapor…

Numerous proposed and developed superconducting fault current limiters and self-limiting transformers limit successfully fault currents but do not provide uninterrupted supplying of consumers. A design investigated in the work combines the…

In this paper, we propose a new Extended-p+ Stepped Gate (ESG) thin film SOI LDMOS with an extended-p+ region beneath the source and a stepped gate structure in the drift region of the LDMOS. The hole current generated due to impact…