基于改进辐射损伤建模的低增益雪崩二极管泄漏电流模拟
仪器与探测器
2022-10-03 v2 高能物理 - 实验
摘要
我们报道经二次离子质谱（SIMS）标定的 IHEP-IME-v1 低增益雪崩二极管（LGAD）的精确 TCAD 模拟。我们的设置允许我们评估 LGAD 的泄漏电流、电容与击穿电压，其在辐照前与测量结果一致。我们提出一种改进的 LGAD 辐射损伤模型（LRDM），其将局域受主移除与全局深能级相结合。该 LRDM 应用于 IHEP-IME-v1 LGAD，并能在 -30 C、辐照通量 下良好预测泄漏电流。电荷收集效率（CCE）尚在开发中。
引用
@article{arxiv.2106.15421,
title = {Leakage current simulations of Low Gain Avalanche Diode with improved Radiation Damage Modeling},
author = {Tao Yang and Kewei Wu and Mei Zhao and Xuewei Jia and Yuhang Tan and Suyu Xiao and Kai Liu and Xiyuan Zhang and Congcong Wang and Mengzhao Li and Yunyun Fan and Shuqi Li and Chengjun Yu and Han Cui and Hao Zeng and Mingjie Zhai and Shuiting Xin and Maoqiang Jing and Gangping Yan and Qionghua Zhai and Mingzheng Ding and Gaobo Xu and Huaxiang Yin and Gregor Kramberger and Zhijun Liang and João Guimarães da Costa and Xin Shi},
journal= {arXiv preprint arXiv:2106.15421},
year = {2022}
}