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We present the design and simulation of a 30 $\mathrm{\mu m}$ thick 4H-SiC Low Gain Avalanche Diode (LGAD) optimized for high-voltage operation. A 2.4 $\mathrm{\mu m}$ thick epitaxially grown gain layer enables controlled internal…

Motivated by the need for fast timing detectors to withstand up to 2 MGy of ionizing dose at the High Luminosity Large Hadron Collider, prototype low gain avalanche detectors (LGADs) have been fabricated in single pad configuration, 2x2…

Low Gain Avalanche Detectors (LGAD) for the High-Granularity Timing Detector (HGTD) are crucial in reducing pileups in the High-Luminosity Large Hadron Collider. Numerous studies have been conducted on the bulk irradiation damage of LGADs.…

This paper shows the simulation and test results of 50um thick Low Gain Avalanche Detectors (LGAD) sensors designed by the Institute of High Energy Physics (IHEP) and fabricated by the Institute of Microelectronics of the Chinese Academy of…

Silicon Carbide device (4H-SiC) has potential radiation hardness, high saturated carrier velocity and low temperature sensitivity theoretically. The Silicon Low Gain Avalanche Diode (LGAD) has been verified to have excellent time…

The low gain avalanche detectors (LGADs) are thin sensors with fast charge collection which in combination with internal gain deliver an outstanding time resolution of about 30 ps. High collision rates and consequent large particle rates…

This paper reports the last technological development on the Low Gain Avalanche Detector (LGAD) and introduces a new architecture of these detectors called inverse-LGAD (iLGAD). Both approaches are based on the standard Avalanche Photo…

Low Gain Avalanche Diodes, also known as LGADs, are widely considered for fast-timing applications in high energy physics, nuclear physics, space science, medical imaging, and precision measurements of rare processes. Such devices are…

Impact ionization in silicon devices has been extensively studied and several models for a quantitative description of the impact ionization coefficients have been proposed. We evaluate those models against gain measurements on Low Gain…

Low-Gain Avalanche Diodes (LGADs) provide moderate internal gain and time resolutions of a few tens of picoseconds, making them a key technology for ultrafast timing in high-energy physics and beyond. However, both their gain and timing…

Low-Gain Avalanche Detectors (LGADs) are the leading 4D sensing technology selected for use in the High Luminosity Large Hadron Collider (HL-LHC). However, their proximity to the interaction point makes them highly susceptible to…

Low Gain Avalanche Detectors (LGADs) are thin silicon detectors with moderate internal signal amplification and time resolution as good as 17 ps for minimum ionizing particles. However, the current major limiting factor in granularity is…

4H-SiC low gain avalanche detectors (LGADs) have been fabricated and characterized. The devices employ a circular mesa design with low-resistivity contacts and an SiO$_2$ passivation layer. The I-V and C-V characteristics of the 4H-SiC…

The performances of Low Gain Avalanche diode (LGAD) sensors from a neutron irradiation campaign with fluences of 0.8 x 10^15, 15 x 10^15 and 2.5 x 10^15 neq/cm2 are reported in this article. These LGAD sensors are developed by the Institute…

Forward proton spectrometers at high-energy proton colliders rely on precision timing to discriminate signal from background. Silicon low gain avalanche diodes (LGADs) are a candidate for future timing detectors in these systems. A major…

Low Gain Avalanche Detectors (LGAD) are based on a n++-p+-p-p++ structure where an appropriate doping of the multiplication layer (p+) leads to high enough electric fields for impact ionization. Gain factors of few tens in charge…

Low Gain Avalanche Detectors (LGADs) are key components for precise timing measurements in high-energy physics experiments, including the High Luminosity upgrades of the current LHC detectors. Their performance is, however, limited by…

Low Gain Avalanche Diodes (LGADs) are thin (20-50 $\mu m$)silicon di ode sensors with modest internal gain (typically 5 to 50) and exceptional time resolution (17 $ps$ to 50 $ps$). However, the granularity of such devices is limited to the…

Silicon carbide (SiC) is a promising material for radiation monitoring in harsh environments, due to its low dark current, high breakdown voltage, high thermal conductivity, and radiation hardness.~This work investigates a SiC-based…

Capacitive-coupled Low-Gain Avalanche Diode (AC-LGAD) sensors are being developed for high-energy particle physics experiments as a detector which provides fast time information with fine spatial resolution. This paper describes…