相关论文: Leakage Current Reduction Techniques in Poly-Si TF…
Lithium metal has been an attractive candidate as a next generation anode material. Despite its popularity, stability issues of lithium in the liquid electrolyte and the formation of lithium whiskers have kept it from practical use.…
We explore solid electrolytes for electrostatic gating using field-effect transistors (FETs) in which thin WSe$_2$ crystals are exfoliated and transferred onto a lithium-ion conducting glass ceramic substrate. For negative gate voltages…
The surface current method known in the theory of electromagnetic waves diffraction is generalized to be applied for the problems of diffraction radiation generated by a charged particle moving nearby an ideally-conducting screen in vacuum.…
The transient response from a transmitter-receiver coil system inside a multi-layer cylindrical conductive configuration is obtained. The particular set-up applies to well logging as well as to eddy current tube testing. In this work, a…
The majority of quantum error detection and correction protocols assume that the population in a qubit does not leak outside of its computational subspace. For many existing approaches, however, the physical qubits do possess more than two…
We report the fabrication and study of Hall bar MOSFET devices in which an overlapping-gate architecture allows four-terminal measurements of low-density 2D electron systems, while maintaining a high density at the ohmic contacts.…
The discovery of transparent electrodes led to the development of optoelectronic devices such as OLEDs, LCDs, touchscreens, IR sensors, etc. Since ITO has many drawbacks in respect of its production cost and limited transparency in IR,…
We study charge transport in a source-channel-drain system with a time-varying applied gate potential acting on the channel. We calculate both the current flowing from the source into the channel and out of the channel into the drain. The…
Modern large-scale computing systems (data centers, supercomputers, cloud and edge setups and high-end cyber-physical systems) employ heterogeneous architectures that consist of multicore CPUs, general-purpose many-core GPUs, and…
Organic water-gated thin-film transistors (WG-TFTs) are of great interest in developing low-cost and high-performance biosensors. The device's sensitivity to changes in measurement conditions can impair long-term operation, and care must be…
Side-channel attacks (SCAs), which infer secret information (for example secret keys) by exploiting information that leaks from the implementation (such as power consumption), have been shown to be a non-negligible threat to modern…
A novel method for extracting threshold voltage and substrate effect parameters of MOSFETs with constant current bias at all levels of inversion is presented. This generalized constant-current (GCC) method exploits the charge-based model of…
Metal oxide (MO) semiconductors are widely used in electronic devices due to their high optical transmittance and promising electrical performance. This work describes the advancement toward an eco-friendly, streamlined method for preparing…
We present an improved fabrication process for overlapping aluminum gate quantum dot devices on Si/SiGe heterostructures that incorporates low-temperature inter-gate oxidation, thermal annealing of gate oxide, on-chip electrostatic…
Power dissipation has become a major obstacle in performance scaling of modern integrated circuits, and has spurred the search for devices operating at lower voltage swing. In this letter, we study p-i-n band-to-band tunneling field effect…
Power electronics systems, widely used in various applications such as industrial automation, electric cars, and renewable energy, have the primary function of converting and controlling electrical power to the desired type of load. Despite…
Field-effect transistors (FETs) with single gates are adversely affected by short channel effects such as drain-induced barrier lowering (DIBL) and increases in the magnitude of sub-threshold swing as the channel length is reduced.…
The trench gate MOSFET has established itself as the most suitable power device for low to medium power applications by offering the lowest possible ON resistance among all MOS devices. The evolution of the trench gate power MOSFET has been…
A common issue in low temperature measurements of enhancement-mode metal-oxide-semiconductor (MOS) field-effect transistors (FETs) in the low electron density regime is the high contact resistance dominating the device impedance. In that…
In this letter we not only show improvement in the performance but also in the reliability of 30nm thick biaxially strained SiGe (20%Ge) channel on Si p-MOSFETs. Compared to Si channel, strained SiGe channel allows larger hole mobility…