相关论文: Leakage Current Reduction Techniques in Poly-Si TF…
The deep trapping gate pixel device was described recently as an alternative to CMOS 3T pixel. The feasibilty of this device was studied with technological and transport simulations used in classical electron devices and process design. A…
Steep transistors are crucial in lowering power consumption of the integrated circuits. However, the difficulties in achieving steepness beyond the Boltzmann limit experimentally have hindered the fundamental challenges in application of…
A comprehensive study of drain current dispersion effects in $\beta$-Ga$_2$O$_3$ FETs has been done using DC, pulsed and RF measurements. Both virtual gate effect in the gate-drain access region and interface traps under the gate are most…
Graphene field-effect transistors are widely used for development of biosensors. However, certain fundamental questions about details of their functioning are not fully understood yet. One of these questions is the presence of gate…
Dual-material double-gate tunnel field effect transistor (DMDG TFET) is a promising candidate for low-power, high-speed electronics due to enhanced electrostatic control and superior switching characteristics. Integrating a pocket region…
Leakage errors damage a qubit by coupling it to other levels. Over the years, several theoretical approaches to dealing with such errors have been developed based on perturbation arguments. Here we propose a different strategy: we use a…
We consider the effects of leakage on the ability to realize a discrete time crystal (DTC) in a semiconductor quantum dot linear array being operated as a chain of singlet-triplet (ST) qubits. This system realizes an Ising model with an…
The concept of the deep trapping gate device was introduced fairly recently on the basis of technological and transport simulations currently used in the field of classical electron devices. The concept of a buried gate containing localized…
The subthreshold leakage current in transistors has become a critical limiting factor for realizing ultra-low-power transistors. The leakage current is predominantly dictated by the long thermal tail of the charge carriers. We propose a…
Mathematically-secure cryptographic algorithms leak significant side channel information through their power supplies when implemented on a physical platform. These side channel leakages can be exploited by an attacker to extract the secret…
Planar ortho-mode transducers (OMTs) are a commonly used method of coupling optical signals between waveguides and on-chip circuitry and detectors. While the ideal OMT-waveguide coupling requires minimal disturbance to the waveguide, when…
This paper depicts the actual variation of gate induced drain leakage current with impurity doping concentration by complete qualitative and quantitative approach. De Casteljaus algorithm is applied to describe the band to band tunneling in…
One of the main enablers in quantum computing is having qubit control that is precise and fast. However, qubits typically have multilevel structures making them prone to unwanted transitions from fast gates. This leakage out of the…
A novel methodology, named the diffusion profile method, is proposed in this research to measure the electric field of a low gain avalanche detector (LGAD).The proposed methodology utilizes the maximum of the time derivative of the edge…
This paper presents a tunable liquid lens (TLL)-assisted indoor mobile visible light communication system. To mitigate performance degradation caused by user mobility and random receiver orientation, an electrowetting cuboid TLL is used at…
A protection method in active distribution networks is proposed in this paper. In active distribution systems, fault currents flow in multiple directions and presents a varying range of value, which poses a great challenge of maintaining…
In this paper, we have worked out a pseudo two dimensional (2D) analytical model for surface potential and drain current of a long channel p-type Dual Material Gate (DMG) Gate All-Around (GAA) nanowire Tunneling Field Effect Transistor…
A MOSFET threshold voltage extraction method covering the entire range of drain-to-source voltage, from linear to saturation modes, is presented. Transconductance-to-current ratio is obtained from MOSFET transfer characteristics measured at…
A new type of low-pass filter based on a leaky coaxial waveguide is presented. The filter has minimal insertion loss in the pass band, while at the same time high attenuation in the stop band is achieved. Thanks to its arrangement, the…
Silicon carbide (SiC) metal-oxide-semiconductor field-effect-transistors (MOSFETs) enable high-voltage and high-temperature power conversion. Compared to Si devices, they suffer from pronounced gate leakage due to the reduced electron…