相关论文: Titanium Silicide Islands on Atomically Clean Si(1…
We describe a method to control and detect in single-shot the electron spin state of an individual donor in silicon with greatly enhanced sensitivity. A silicon-based Single-Electron Transistor (SET) allows for spin-dependent tunneling of…
A large part of the discussion on entanglement islands has explored the specific setup of $2d$ JT gravity with a flat heatbath coupled to a $2d$ CFT. In this paper, we consider a more general setup and treatment of islands in a…
We have investigated the atomically-resolved substrate and homoepitaxial thin film surfaces of SrTiO3(001) using low-temperature scanning tunneling microscopy/spectroscopy (STM/STS) combined with pulsed laser deposition (PLD). It was found…
We demonstrate a technique for creating high quality, large area tunnel junction barriers for normal-insulating- superconducting or superconducting-insulating-superconducting tunnel junctions. We use atomic layer depo- sition and an…
We study the low temperature electrical transport behaviour of a silicon single electron transistor. The island and leads are defined by patterned phosphorus doped regions achieved by ion implantation through a polymer resist mask. In the…
Sputter thin film deposition after photolithography often produces unwanted spikes along the side edges. These spikes are a significant issue for the development of magnetic tunnel junction (MTJ)-based memory and molecular spintronics…
We present experimental and numerical results from a real-time detection of time-correlated single-electron tunneling oscillations in a one-dimensional series array of small tunnel junctions. The electrons tunnel with a frequency f=I/e,…
We construct a theory of quantum fluctuatons in a regular array of small superconductive islands connected via low-resistance tunnel contacts to a dirty thin metal film. Electron-electron interaction in the film is assumed to be repulsive.…
Ion conducting materials are critical components of batteries, fuel cells, and devices such as memristive switches. Analytical tools are therefore sought that allow the behavior of ions in solids to be monitored and analyzed with high…
Electrons confined in silicon quantum dots exhibit orbital, spin, and valley degrees of freedom. The valley degree of freedom originates from the bulk bandstructure of silicon, which has six degenerate electronic minima. The degeneracy can…
Using low-temperature scanning tunneling microscopy and spectroscopy, we have studied the proximity effect at the interfaces between superconducting Pb island structures and metallic Pb-induced striped-incommensurate phase formed on a…
Here we report the direct observation of single electron charging of a single atomic Dangling Bond (DB) on the H-Si(100) 2x1 surface. The tip of a scanning tunneling microscope is placed adjacent to the DB to serve as a single electron…
The Sachdev-Ye-Kitaev (SYK) model describes a strongly correlated metal with all-to-all random interactions (average strength $J$) between $N$ fermions (complex Dirac fermions or real Majorana fermions). In the large-$N$ limit a conformal…
A split gate technique is used to form a lateral quantum dot in a two-dimensional electron gas of a modulation-doped silicon/silicon-germanium heterostructure. e-beam lithography was employed to produce split gates. By applying negative…
We report on the realization of a platform for trapping and manipulating individual $^{88}$Sr atoms in optical tweezers. A first cooling stage based on a blue shielded magneto-optical trap (MOT) operating on the $^1S_0$ -> $^1P_1$…
A single-electron tunneling (SET) device with a nanoscale central island that can move with respect to the bulk source- and drain electrodes allows for a nanoelectromechanical (NEM) coupling between the electrical current through the device…
Vanadium silicide (V$_3$Si) is a promising superconductor for integration with silicon-based electronics, however the interfacial growth kinetics have a strong influence on the resulting superconducting properties and are not yet fully…
As personal electronic devices increasingly rely on cloud computing for energy-intensive calculations, the power consumption associated with the information revolution is rapidly becoming an important environmental issue. Several approaches…
Solid-state devices can be fabricated at the atomic scale, with applications ranging from classical logic to current standards and quantum technologies. While it is very desirable to probe these devices and the quantum states they host at…
The superconductor-insulator transition (SIT) in thin-film disordered superconductors is a hallmark example of a quantum phase transition. Despite being observed more than 30 years ago, its nature is still under a vivid debate. One…