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In the presence of an external magnetic field, the low lying elementary excitations of a d-wave superconductor have quantized energy and their momenta are locked near the node direction. It is argued that these discrete states can most…

超导电性 · 物理学 2009-10-31 Boldizsar Janko

Analysis of room-temperature current-voltage (I-V) characteristics of a silicon box in a nanopillar transistor suggests that a weak electromechanical coupling of 0.17 is responsible for the stable tunnel of single-electron. The dynamics…

量子物理 · 物理学 2007-07-24 Yue-Min Wan , Heng-Tien Lin

We have measured the very low temperature (down to 30 mK) subgap resistance of Titanium Nitride (Superconductor, Tc = 4.6 K)/highly doped Silicon (Semiconductor) SIN junction (the insulating layer stands for the Schottky barrier). As the…

介观与纳米尺度物理 · 物理学 2009-10-31 F. Lefloch , D. Quirion , M. Sanquer

Scanning tunneling microscopy images of hydrogen-terminated Si(110) surfaces are studied using first-principles calculations. Our results show that the calculated filled-state images and local density of states are consistent with recent…

材料科学 · 物理学 2009-11-11 Shinya Horie , Kenta Arima , Kikuji Hirose , Jun Katoh , Tomoya Ono , Katsuyoshi Endo

Nickel vapor-deposited on the SrTiO$_3$(110) surface was studied using scanning tunneling microscopy, photoemission spectroscopy (PES), and density functional theory calculations. This surface forms a (4 $\times$ 1) reconstruction, composed…

Detection of a single nuclear spin constitutes an outstanding problem in different fields of physics such as quantum computing or magnetic imaging. Here we show that the energy levels of a single nuclear spin can be measured by means of…

介观与纳米尺度物理 · 物理学 2011-12-16 F. Delgado , J. Fernández-Rossier

The performance of superconducting devices is often degraded by the uncontrolled appearance and disappearance of quasiparticles, a process known as poisoning. We demonstrate electrostatic control of quasiparticle poisoning in the form of…

We measure the current vs voltage (I-V) characteristics of a diodelike tunnel junction consisting of a sharp metallic tip placed at a variable distance d from a planar collector and emitting electrons via electric-field assisted emission.…

We present a superconducting device showing a clear parity effect in the number of electrons, even when there is, on average, a single nonequilibrium quasiparticle present and the parity of the island switches due to quasiparticles…

介观与纳米尺度物理 · 物理学 2019-07-17 E. T. Mannila , V. F. Maisi , H. Q. Nguyen , C. M. Marcus , J. P. Pekola

A model of a superconducting tunnel junction which refrigerates a nearby metallic island without any particle exchange is presented. Heat extraction is mediated by charge fluctuations in the coupling capacitance of the two systems. The…

介观与纳米尺度物理 · 物理学 2017-11-30 Rafael Sánchez

In the ring-shaped tunnel-junction array with four islands, the secondary Coulomb blockade gap in a low bias-voltage range is observed in the I-V characteristics. We attribute its appearance to the unique topology of the array which induces…

介观与纳米尺度物理 · 物理学 2009-10-31 Mincheol Shin , Seongjae Lee , Kyoung Wan Park , El-Hang Lee

We report the fabrication and measurement of one-electron single and double quantum dots with fast tunnel rates in a Si/SiGe heterostructure. Achieving fast tunnel rates in few-electron dots can be challenging, in part due to the large…

介观与纳米尺度物理 · 物理学 2011-04-07 Madhu Thalakulam , C. B. Simmons , B. M. Rosemeyer , D. E. Savage , M. G. Lagally , Mark Friesen , S. N. Coppersmith , M. A. Eriksson

We demonstrate single electron-hole pair resolution in a single-sided, contact-free 1 cm$^2$ by 1 mm thick Si crystal operated at 48 mK, with a baseline energy resolution of 3 eV. This crystal can be operated at voltages in excess of…

We analyze topographic scanning force microscopy images together with Kelvin probe images obtained on Pb islands and on the wetting layer on Si(111) for variable annealing times. Within the wetting layer we observe negatively charged…

介观与纳米尺度物理 · 物理学 2020-01-16 Th. Späth , M. Popp , R. Hoffmann-Vogel

Normal-metal films overlaid with arrays of superconducting islands undergo Berezinskii-Kosterlitz-Thouless (BKT) superconducting transitions at a temperature $T_{BKT}$. We present measurements of T$_{BKT}$ for arrays of mesoscopic Nb…

超导电性 · 物理学 2015-12-17 Serena Eley , Sarang Gopalakrishnan , Paul M. Goldbart , Nadya Mason

We have suspended an Al based single-electron transistor whose island can resonate freely between the source and drain leads forming the clamps. In addition to the regular side gate, a bottom gate with a larger capacitance to the SET island…

介观与纳米尺度物理 · 物理学 2015-05-18 Yu. A. Pashkin , T. F. Li , J. P. Pekola , O. Astafiev , D. A. Knyazev , F. Hoehne , H. Im , Y. Nakamura , J. S. Tsai

We report measurements of charge configurations and charge transfer dynamics in a hybrid single-electron box composed of aluminum and copper. We used two single-electron transistors (SETs) to simultaneously read out different parts of the…

介观与纳米尺度物理 · 物理学 2014-07-08 Chia-Heng Sun , Po-Chen Tai , Jheng-An Jiang , Cen-Shawn Wu , Jeng-Chung Chen , Yung-Fu Chen

We have measured electrical transport across epitaxial, nanometer-sized metal-semiconductor interfaces by contacting CoSi2-islands grown on Si(111) with an STM-tip. The conductance per unit area was found to increase with decreasing diode…

凝聚态物理 · 物理学 2009-11-07 G. D. J. Smit , S. Rogge , T. M. Klapwijk

Growth of narrow-neck, epitaxial as well as non-epitaxial and nearly spherical Ge islands on air-exposed Si(111)-(7\times7) surfaces has been investigated by in-situ scanning tunnelling microscopy (STM) and ex-situ high resolution…

介观与纳米尺度物理 · 物理学 2011-10-20 K. Bhattacharjee , A. Roy , S. Roy , J. Ghatak , S. Mathew , P. V. Satyam , B. N. Dev

The long term scaling prospects for solid-state quantum computing architectures relies heavily on the ability to simply and reliably measure and control the coherent electron interaction strength, known as the tunnel coupling, $t_c$. Here,…